SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
2SC2073 TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM
: 1.5 W (Tamb=25℃)
Collector current
I
CM
: 1.5 A
Collector-base voltage
V
(BR)CBO
: 150 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=100μA, I
E
=0 150 V
Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, I
B
=0 150 V
Emitter-base breakdown voltage V(BR)EBO I
E
=100μA, I
C
=0 5 V
Collector cut-off current ICBO V
CB
=120V, I
E
=0 10 μA
Emitter cut-off current IEBO V
EB
=5V, I
C
=0 10 μA
DC current gain hFE(1) V
CE
=10V, I
C
=500mA 40 140
Collector-emitter saturation voltage VCE(sat) I
C
=500mA, I
B
=50mA 1.5 V
Base-emitter voltage VBE V
CE
=10V, I
C
=500mA 0.65 0.85 V
Transition frequency f
T
V
CE
=10V, I
C
=500mA 4 MHz
Collector output capacitance C
ob
V
CB
=10V, I
E
=0, f=1MHz 35 pF
1 2 3
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
