SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
S9013 TRANSISTOR (NPN)
FEATURE
Power dissipation
P
CM:
0.625 W (Tamb=25℃)
Collector current
I
CM:
0.5 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
j
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100μA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V
Collector cut-off current ICBO VCB= 40V, IE=0 0.1 μA
Collector cut-off current ICEO VCE=20V, IE=0 0.1 μA
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA
h
FE(1)
V
CE
=1V, I
C
=50mA 64 400
DC current gain
h
FE(2)
V
CE
=1V, I
C
= 500mA 40
Collector-emitter saturation voltage VCE(sat) IC= 500 mA, IB= 50mA 0.6 V
Base-emitter voltage VBE(sat) IC= 500 mA, IB= 50mA 1.2 V
Transition frequency f
T
V
CE
=6V, I
C
=20mA,
f=30MHz
150 MHz
CLASSIFICATION OF h
FE(1)
Rank D E F G H I J
Range 64-91 78-112 96-135 112-166 144-202 190-300 300-400
1 2 3
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
