ABB Semiconductors AG reserves the right to change specifications without notice.
V
SM
= 5200 V
I
TAVM
= 1800 A
I
TRMS
= 2830 A
I
TSM
= 29000 A
V
T0
=1.02V
r
T
= 0.320 m?
Bi-Directional Control Thyristor
5STB 17N5200
Doc,No,5SYA1036-03 Sep,01
Two thyristors integrated into one wafer
Patented free-floating silicon technology
Designed for traction,energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Part Number 5STB 17N5200 5STB 17N5000 5STB 17N4600 Conditions
V
SM
5200 V 5000 V 4600 V f = 5 Hz,t
p
= 10ms
V
RM
4400 V 4200 V 4000 V f = 50 Hz,t
p
= 10ms
I
SM ≤ 400 mA
V
SM
I
RM ≤ 400 mA
V
RM
T
j
= 125°C
dV/dt
crit
2000 V/μs @ Exp,to 0.67xV
SM
V
RM
is equal to V
SM
up to T
j
= 110°C
Mechanical data
F
M
Mounting force nom,90 kN
min,81 kN
max,108 kN
a
Acceleration
Device unclamped
Device clamped
50
100
m/s
2
m/s
2
mWeight 2.9kg
D
S
Surface creepage distance 53 mm
D
a
Air strike distance 22 mm
5STB 17N5200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc,No,5SYA1036-03 Sep,01 page 2 of 6
On-state
I
TAVM
Max,average on-state
t
1800 A Half sine wave,T
C
= 70°C
I
TRMS
Max,RMS on-state current 2830 A
I
TSM
Max,peak non-repetitive 29000 A tp = 10 ms T
j
= 125°C
surge current 31000 A tp = 8.3 ms After surge:
I
2
t Limiting load integral 4205 kA
2
stp= 10msV
D
= V
R
= 0V
3990 kA
2
stp= 8.3ms
V
T
On-state voltage 1.68 V I
T
= 2000 A
V
T0
Threshold voltage 1.02 V I
T
= 1000 - 3000 A T
j
= 125°C
r
T
Slope resistance 0.320 m?
I
H
Holding current 50-250 mA T
j
= 25°C
25-150 mA T
j
= 125°C
I
L
Latching current 100-500 mA T
j
= 25°C
50-300 mA T
j
= 125°C
Switching
di/dt
crit
Critical rate of rise of on-state 250 A/μs Cont,f = 50 Hz V
D
≤ 0.67?V
DRM
,T
j
= 125°C
current 500 A/μs I
TRM
= 3000 A60 sec.
f = 50Hz
I
FG
= 2 A,t
r
= 0.5 μs
t
d
Delay time ≤ 3.0 μs V
D
= 0.4?V
DRM
I
FG
= 2 A,t
r
= 0.5 μs
t
q
Turn-off time ≤ 700 μs V
D
≤ 0.67?V
DRM
I
TRM
= 3000 A,T
j
= 125°C
dv
D
/dt = 20V/μs V
R
> 200 V,di
T
/dt = -1.5 A/μs
Q
rr
Recovery charge min 4000 μAs
max 5200 μAs
Triggering
V
GT
Gate trigger voltage ≤ 2.6 V T
j
= 25°C
I
GT
Gate trigger current ≤ 400 mA T
j
= 25°C
V
GD
Gate non-trigger voltage ≥ 0.3 V V
D
= 0.4?V
RM
T
j
= 125°C
I
GD
Gate non-trigger current ≥ 10 mA V
D
= 0.4?V
RM
T
j
= 125°C
V
FGM
Peak forward gate voltage 12 V
I
FGM
Peak forward gate current 10 A
V
RGM
Peak reverse gate voltage 10 V
P
G
Maximum gate power loss 3 W
5STB 17N5200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc,No,5SYA1036-03 Sep,01 page 3 of 6
Thermal
T
j
Operating junction temperature range -40…125 °C
T
stg
Storage temperature range -40…150 °C
R
thJC
Thermal resistance 22.8 K/kW Anode side cooled
junction to case 22.8 K/kW Cathode side cooled
11.4 K/kW Double side cooled
R
thCH
Thermal resistance case to 4 K/kW Single side cooled
heat sink 2 K/kW Double side cooled
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ithJC
i
Ge5
=
τ
i1234
R
i
(K/kW) 6.77 2.51 1.34 0.78
τ
i
(s) 0.8651 0.1558 0.0212 0.0075
0.001 0.010 0.100 1.000 10.000
t [s]
0
5
10
15
Z
thJC
[K/kW]
BN
1
180° sine,add 1 K/kW
180° rectangular,add 1 K/kW
120° rectangular,add 1 K/kW
60° rectangular:
add
2
K/kW
F
m
= 81..108 kN
Double-side cooling
Fig,1 Transient thermal impedance junction to case.
On-state characteristic model:
ITDiTCiTBAVT?++?+?+= )1ln(
Valid for i
T
= 500 – 4000 A
AB CD
1.309 0.00008 -0.125 0.026
Fig,2 On-state characteristics,Fig,3 On-state characteristics.
5STB 17N5200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc,No,5SYA1036-03 Sep,01 page 4 of 6
0 500 1000 1500 2000 2500 3000
I
TAV
(A)
70
75
80
85
90
95
100
105
110
115
120
125
130
T
case
(°C)
DC
180°
rectangular
180°
sine
120°
rectangular
5S
T
B
17N52
00
Double-sided
cooling
Fig,4 On-state power dissipation vs,mean on-
state current,Turn - on losses excluded.
Fig,5 Max,permissible case temperature vs.
mean on-state current.
Fig,6 Surge on-state current vs,pulse length.
Half-sine wave.
Fig,7 Surge on-state current vs,number of
pulses,Half-sine wave,10 ms,50Hz.
5STB 17N5200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc,No,5SYA1036-03 Sep,01 page 5 of 6
Fig,8 Gate trigger characteristics,Fig,9 Max,peak gate power loss.
10
4
3000
4000
5000
6000
7000
8000
20000
Q
rr
(μAs)
30
-di
T
/dt (A/μs)
11023456789 20
I
TRM
= 3000 A
T
j
= T
jmax
5STB
17N5200
2000
30000
10
2
10
3
60
70
80
200
300
400
500
600
700
800
I
RM
(A)
30
-di
T
/dt (A/μs)
11023456789 20
30
I
TRM
= 3000 A
T
j
= T
jmax
5S
T
B
1
7
N
5
200
Fig,10 Recovery charge vs,decay rate of on-
state current.
Fig,11 Peak reverse recovery current vs,decay
rate of on-state current.
Turn - off time,typical parameter relationship.
0 4 8 121620242832
di
T
/dt (A/μs)
1.0
1.1
1.2
1.3
5
S
TB 17N
5
2
0
0
f (-di /dt)
2 T
-
Fig,12 t
q
/t
q1
= f
1
(T
j
) Fig,13 t
q
/t
q1
= f
2
(-di
T
/dt) Fig,14 t
q
/t
q1
= f
3
(dv/dt)
t
q
= t
q1
f
1
(T
j
)? f
2
(-di
T
/dt)? f
3
(dv/dt) tq1,at normalized values (see page 2)
t
q
,at varying conditions
5STB 17N5200
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc,No,5SYA1036-03 Sep,01
Fabrikstrasse 3
CH-5600 Lenzburg,Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Turn-on and Turn-off losses
012345678
I
T
(kA)
0
1
2
3
4
5
W
on
(Ws/pulse)
t
p
= 1 ms
t
p
= 2 ms
t
p
= 5 ms
t
p
= 10 ms
5S
T
B
17
N
5
200
012345678
I
T
(kA)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
W
on
(Ws/pulse)
di/dt = 10 A/μs
di/dt = 5 A/μs
di/dt = 2 A/μs
di/dt = 1 A/μs
5
S
T
B
17N
5
2
0
0
Fig,15W
on
= f(I
T
,t
P
),T
j
= 125 °C.
Half sinusoidal waves.
Fig,16W
on
= f(I
T
,di/dt),T
j
= 125 °C.
Rectangular waves.
0.00.40.81.21.62.02.42.8
V
0
(kV)
0
1
2
3
4
5
6
7
8
9
10
W
off
(Ws/pulse)
I
TRM
= 8000 A
I
TRM
= 6000 A
I
TRM
= 4000 A
5S
T
B
17N52
00
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
V
0
(kV)
0
2
4
6
8
10
12
14
16
18
W
off
(Ws/pulse)
di/dt = 10 A/μs
di/dt = 5 A/μs
di/dt = 2 A/μs
di/dt = 1 A/μs
5
S
TB 17N
5
2
0
0
Fig,17W
off
= f(V
0
,I
T
),T
j
= 125 °C.
Half sinusoidal waves,t
P
= 10 ms.
Fig,18W
off
= f(V
0
,di/dt),T
j
= 125 °C.
Rectangular waves.
V
SM
= 5200 V
I
TAVM
= 1800 A
I
TRMS
= 2830 A
I
TSM
= 29000 A
V
T0
=1.02V
r
T
= 0.320 m?
Bi-Directional Control Thyristor
5STB 17N5200
Doc,No,5SYA1036-03 Sep,01
Two thyristors integrated into one wafer
Patented free-floating silicon technology
Designed for traction,energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Part Number 5STB 17N5200 5STB 17N5000 5STB 17N4600 Conditions
V
SM
5200 V 5000 V 4600 V f = 5 Hz,t
p
= 10ms
V
RM
4400 V 4200 V 4000 V f = 50 Hz,t
p
= 10ms
I
SM ≤ 400 mA
V
SM
I
RM ≤ 400 mA
V
RM
T
j
= 125°C
dV/dt
crit
2000 V/μs @ Exp,to 0.67xV
SM
V
RM
is equal to V
SM
up to T
j
= 110°C
Mechanical data
F
M
Mounting force nom,90 kN
min,81 kN
max,108 kN
a
Acceleration
Device unclamped
Device clamped
50
100
m/s
2
m/s
2
mWeight 2.9kg
D
S
Surface creepage distance 53 mm
D
a
Air strike distance 22 mm
5STB 17N5200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc,No,5SYA1036-03 Sep,01 page 2 of 6
On-state
I
TAVM
Max,average on-state
t
1800 A Half sine wave,T
C
= 70°C
I
TRMS
Max,RMS on-state current 2830 A
I
TSM
Max,peak non-repetitive 29000 A tp = 10 ms T
j
= 125°C
surge current 31000 A tp = 8.3 ms After surge:
I
2
t Limiting load integral 4205 kA
2
stp= 10msV
D
= V
R
= 0V
3990 kA
2
stp= 8.3ms
V
T
On-state voltage 1.68 V I
T
= 2000 A
V
T0
Threshold voltage 1.02 V I
T
= 1000 - 3000 A T
j
= 125°C
r
T
Slope resistance 0.320 m?
I
H
Holding current 50-250 mA T
j
= 25°C
25-150 mA T
j
= 125°C
I
L
Latching current 100-500 mA T
j
= 25°C
50-300 mA T
j
= 125°C
Switching
di/dt
crit
Critical rate of rise of on-state 250 A/μs Cont,f = 50 Hz V
D
≤ 0.67?V
DRM
,T
j
= 125°C
current 500 A/μs I
TRM
= 3000 A60 sec.
f = 50Hz
I
FG
= 2 A,t
r
= 0.5 μs
t
d
Delay time ≤ 3.0 μs V
D
= 0.4?V
DRM
I
FG
= 2 A,t
r
= 0.5 μs
t
q
Turn-off time ≤ 700 μs V
D
≤ 0.67?V
DRM
I
TRM
= 3000 A,T
j
= 125°C
dv
D
/dt = 20V/μs V
R
> 200 V,di
T
/dt = -1.5 A/μs
Q
rr
Recovery charge min 4000 μAs
max 5200 μAs
Triggering
V
GT
Gate trigger voltage ≤ 2.6 V T
j
= 25°C
I
GT
Gate trigger current ≤ 400 mA T
j
= 25°C
V
GD
Gate non-trigger voltage ≥ 0.3 V V
D
= 0.4?V
RM
T
j
= 125°C
I
GD
Gate non-trigger current ≥ 10 mA V
D
= 0.4?V
RM
T
j
= 125°C
V
FGM
Peak forward gate voltage 12 V
I
FGM
Peak forward gate current 10 A
V
RGM
Peak reverse gate voltage 10 V
P
G
Maximum gate power loss 3 W
5STB 17N5200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc,No,5SYA1036-03 Sep,01 page 3 of 6
Thermal
T
j
Operating junction temperature range -40…125 °C
T
stg
Storage temperature range -40…150 °C
R
thJC
Thermal resistance 22.8 K/kW Anode side cooled
junction to case 22.8 K/kW Cathode side cooled
11.4 K/kW Double side cooled
R
thCH
Thermal resistance case to 4 K/kW Single side cooled
heat sink 2 K/kW Double side cooled
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ithJC
i
Ge5
=
τ
i1234
R
i
(K/kW) 6.77 2.51 1.34 0.78
τ
i
(s) 0.8651 0.1558 0.0212 0.0075
0.001 0.010 0.100 1.000 10.000
t [s]
0
5
10
15
Z
thJC
[K/kW]
BN
1
180° sine,add 1 K/kW
180° rectangular,add 1 K/kW
120° rectangular,add 1 K/kW
60° rectangular:
add
2
K/kW
F
m
= 81..108 kN
Double-side cooling
Fig,1 Transient thermal impedance junction to case.
On-state characteristic model:
ITDiTCiTBAVT?++?+?+= )1ln(
Valid for i
T
= 500 – 4000 A
AB CD
1.309 0.00008 -0.125 0.026
Fig,2 On-state characteristics,Fig,3 On-state characteristics.
5STB 17N5200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc,No,5SYA1036-03 Sep,01 page 4 of 6
0 500 1000 1500 2000 2500 3000
I
TAV
(A)
70
75
80
85
90
95
100
105
110
115
120
125
130
T
case
(°C)
DC
180°
rectangular
180°
sine
120°
rectangular
5S
T
B
17N52
00
Double-sided
cooling
Fig,4 On-state power dissipation vs,mean on-
state current,Turn - on losses excluded.
Fig,5 Max,permissible case temperature vs.
mean on-state current.
Fig,6 Surge on-state current vs,pulse length.
Half-sine wave.
Fig,7 Surge on-state current vs,number of
pulses,Half-sine wave,10 ms,50Hz.
5STB 17N5200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc,No,5SYA1036-03 Sep,01 page 5 of 6
Fig,8 Gate trigger characteristics,Fig,9 Max,peak gate power loss.
10
4
3000
4000
5000
6000
7000
8000
20000
Q
rr
(μAs)
30
-di
T
/dt (A/μs)
11023456789 20
I
TRM
= 3000 A
T
j
= T
jmax
5STB
17N5200
2000
30000
10
2
10
3
60
70
80
200
300
400
500
600
700
800
I
RM
(A)
30
-di
T
/dt (A/μs)
11023456789 20
30
I
TRM
= 3000 A
T
j
= T
jmax
5S
T
B
1
7
N
5
200
Fig,10 Recovery charge vs,decay rate of on-
state current.
Fig,11 Peak reverse recovery current vs,decay
rate of on-state current.
Turn - off time,typical parameter relationship.
0 4 8 121620242832
di
T
/dt (A/μs)
1.0
1.1
1.2
1.3
5
S
TB 17N
5
2
0
0
f (-di /dt)
2 T
-
Fig,12 t
q
/t
q1
= f
1
(T
j
) Fig,13 t
q
/t
q1
= f
2
(-di
T
/dt) Fig,14 t
q
/t
q1
= f
3
(dv/dt)
t
q
= t
q1
f
1
(T
j
)? f
2
(-di
T
/dt)? f
3
(dv/dt) tq1,at normalized values (see page 2)
t
q
,at varying conditions
5STB 17N5200
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc,No,5SYA1036-03 Sep,01
Fabrikstrasse 3
CH-5600 Lenzburg,Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Turn-on and Turn-off losses
012345678
I
T
(kA)
0
1
2
3
4
5
W
on
(Ws/pulse)
t
p
= 1 ms
t
p
= 2 ms
t
p
= 5 ms
t
p
= 10 ms
5S
T
B
17
N
5
200
012345678
I
T
(kA)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
W
on
(Ws/pulse)
di/dt = 10 A/μs
di/dt = 5 A/μs
di/dt = 2 A/μs
di/dt = 1 A/μs
5
S
T
B
17N
5
2
0
0
Fig,15W
on
= f(I
T
,t
P
),T
j
= 125 °C.
Half sinusoidal waves.
Fig,16W
on
= f(I
T
,di/dt),T
j
= 125 °C.
Rectangular waves.
0.00.40.81.21.62.02.42.8
V
0
(kV)
0
1
2
3
4
5
6
7
8
9
10
W
off
(Ws/pulse)
I
TRM
= 8000 A
I
TRM
= 6000 A
I
TRM
= 4000 A
5S
T
B
17N52
00
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
V
0
(kV)
0
2
4
6
8
10
12
14
16
18
W
off
(Ws/pulse)
di/dt = 10 A/μs
di/dt = 5 A/μs
di/dt = 2 A/μs
di/dt = 1 A/μs
5
S
TB 17N
5
2
0
0
Fig,17W
off
= f(V
0
,I
T
),T
j
= 125 °C.
Half sinusoidal waves,t
P
= 10 ms.
Fig,18W
off
= f(V
0
,di/dt),T
j
= 125 °C.
Rectangular waves.
