1/8
www.dynexsemi.com
MP02XXX190 Series
MP02XXX190 Series
Phase Control Dual SCR,SCR/Diode Modules
Replaces January 2000 version,DS4479-4.0 DS4479-5.0 July 2002
FEATURES
a73 Dual Device Module
a73 Electrically Isolated Package
a73 Pressure Contact Construction
a73 International Standard Footprint
a73 Alumina (non-toxic) Isolation Medium
APPLICATIONS
a73 Motor Control
a73 Controlled Rectifier Bridges
a73 Heater Control
a73 AC Phase Control
VOLTAGE RATINGS
ORDERING INFORMATION
Order As:
MP02HBT190-12 or MP02HBT190-10 or MP02HBT190-08
MP02HBP190-12 or MP02HBP190-10 or MP02HBP190-08
MP02HBN190-12 or MP02HBN190-10 or MP02HBN190-08
Note,When ordering,please use the complete part number.
KEY PARAMETERS
V
DRM
1200V
I
TSM
5500A
I
T(AV)(per arm)
190A
V
isol
3000V
Code Circuit
HBT
HBP
HBN
Fig.1 Circuit diagrams
123
Fig,2 Electrical connections - (not to scale)
Module type code,MP02.
For further information see Package Details.
Lower voltage grades available.
Repetitive
Peak
Voltages
V
DRM
V
RRM
Type
Number
1200
1000
1000
MP02XXX190-12
MP02XXX190-10
MP02XXX190-08
T
vj
= 125
o
C
I
DRM
= I
RRM
= 30mA
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Conditions
2/8
www.dynexsemi.com
MP02XXX190 Series
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device,In extreme
conditions,as with all semiconductors,this may include potentially hazardous rupture of the package,Appropriate safety
precautions should always be followed,Exposure to Absolute Maximum Ratings may affect device reliability.
Test Conditions
Half wave resistive load T
case
= 75?C
T
case
= 85?C
T
case
= 75?C
10ms half sine,T
j
= 125?C
V
R
= 0
10ms half sine,T
j
= 125?C
V
R
= 50% V
DRM
Commoned terminals to base plate.
AC RMS,1 min,50Hz
Symbol
I
T(AV)
I
T(RMS
I
TSM
I
2
t
I
TSM
I
2
t
V
isol
Units
A
A
A
kA
A
2
s
kA
A
2
s
V
Max.
190
160
300
6.8
231 x 10
3
5.5
150 x 10
3
3000
Parameter
Mean on-state current
RMS value
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Isolation voltage
Test Conditions
dc
Half wave
3 Phase
Mounting torque = 6Nm
with mounting compound
Reverse (blocking)
-
Mounting - M6
Electrical connections - M6
-
Parameter
Thermal resistance - junction to case
(per thyristor or diode)
Thermal resistance - case to heatsink
(per thyristor or diode)
Virtual junction temperature
Storage temperature range
Screw torque
Weight (nominal)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-hs)
T
vj
T
stg
-
-
Units
C/kW
C/kW
C/kW
C/kW
C
C
Nm (lb.ins)
Nm (lb.ins)
g
Max.
0.21
0.22
0.23
0.07
125
125
6 (55)
5 (44)
350
Min.
-
-
-
-
-
–40
-
-
-
3/8
www.dynexsemi.com
MP02XXX190 Series
Units
mA
V/μs
A/μs
V
m?
Test Conditions
At V
RRM
/V
DRM
,T
j
= 125?C
To 67% V
DRM
,T
j
= 125?C
From 67% V
DRM
to 400A,Repetitive 50Hz
Gate source 20V,20?,
t
r
= 0.5μs,T
j
= 125?C
At T
vj
= 125?C,See note 1
At T
vj
= 125?C,See note 1
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
V
T(TO)
r
T
Max.
30
1000
500
0.88
0.7
Min.
-
-
-
-
-
Note 1,The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only,Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V,T
case
= 25
o
C
V
DRM
= 5V,T
case
= 25
o
C
At V
DRM
,T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig,5
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3.0
150
0.25
30
0.25
5
10
100
5
Units
V
mA
V
V
V
V
A
W
W
4/8
www.dynexsemi.com
MP02XXX190 Series
1.0 1.5 2.0 2.5
Instantaneous on-state voltage,V
T
- (V)
0
500
1000
1500
2000
Instantaneous on-state current,I
T
- (A)
Measured under pulse conditions
T
j
= 125?C
Fig,6 Transient thermal impedance - dc
Fig,3 Maximum (limit) on-state characteristics Fig,4 Surge (non-repetitive) on-state current vs time
(Thyristor or diode with 50% V
RRM
at T
case
= 125?C)
Fig,5 Gate characteristics
0.001 0.010 0.100 1.0 10 100
Time - (s)
0
0.1
0.2
0.3
Thermal impedance - (
C/W)
R
th(j-hs)
R
th(j-c)
1010.10.010.001
Gate trigger current,I
GT
- (A)
100
10
1
0.1
Gate trigger voltage,V
GT
- (V)
100W
50W
20W
10W
5W
Region of certain
triggering
Upper limit 95%
Lower
limit 5%
T
j
= 125
C
T
j
= 25
C
T
j
= -40
C
V
GD
I
FGM
20
15
10
5
0
Peak half sine wave on-state current - (kA)
1101234550
ms Cycles at 50Hz
Duration
50
100
I
2
t value - (A
2
s x 10
3
)
I
2
t
I
2
t =?
2
x t
2
150
10 20 30
5/8
www.dynexsemi.com
MP02XXX190 Series
Fig,7 On-state power loss per arm vs on-state current at
specified conduction angles,sine wave 50/60Hz
Fig,8 On-state power loss per arm vs on-state current at
specified conduction angles,square wave 50/60Hz
Fig,9 Maximum permissible case temperature vs on-state
current at specified conduction angles,sine wave 50/60Hz
Fig,10 Maximum permissible case temperature vs on-state
current at specified conduction angles,square wave 50/60Hz
0 50 100 150 200 250
Mean on-state current,I
T(AV)
- (A)
300
250
200
150
100
50
0
On-state power loss per device - (W)
180?
120?
90?
60?
30?
0 50 100 150 200 250 300
Mean on-state current,I
T(AV)
- (A)
400
350
300
250
200
150
100
50
0
On-state power loss per device - (W)
180?
120?
90?
60?
30?
d.c.
0 50 100 150 200 250
Mean on-state current,I
T(AV)
- (A)
120
100
80
60
40
20
0
Maximum permissible case temperature - (
C)
180?120?90?60?30?
140
0 50 100 150 200 250 300
Mean on-state current,I
T(AV)
- (A)
120
100
80
60
40
20
0
Maximum permissible case temperature - (
C)
180?120?90?60?30?
140
d.c.
6/8
www.dynexsemi.com
MP02XXX190 Series
Fig,11 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for
various values of heatsink thermal resistance
(Note,R
th(hs-a)
values given above are true heatsink thermal resistances to ambient and already account for R
th(c-hs)
module contact thermal)
Fig,12 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for
various values of heatsink thermal resistance
(Note,R
th(hs-a)
values given above are true heatsink thermal resistances to ambient and already account for R
th(c-hs)
module contact thermal)
040801200 20 400100 300
1200
1000
800
600
400
200
0
Total power - (W)
1006020
Maximum ambient temperature - (?C) D.C,output current - (A)
R
th(hs-a)
C/W0.02
0.04
0.08
0.10
0.12
0.15
0.20
0.40
0.30
R - Load
L - Load
040801200 200 400100 300
1200
1000
800
600
400
200
0
Total power - (W)
1006020
Maximum ambient temperature - (?C) D.C,output current - (A)
R & L- Load
R
th(hs-a)
C/W
0.020.04
0.08
0.10
0.12
0.15
0.20
0.30
0.40
7/8
www.dynexsemi.com
MP02XXX190 Series
PACKAGE DETAILS
For further package information,please contact Customer Services,All dimensions in mm,unless stated otherwise.
DO NOT SCALE.
23 23 24
13
80
34
30
94
3x M6
12.8
2 holes?6.5
123
24
5
15
K
2
G
2
K
1 G
1
Nominal weight,350g
Recommended fixings for mounting,M6 socket head cap screws
Recommended mounting torque,6Nm (55lb.ins)
Recommended torque for electrical connections,5Nm (44lb.ins)
Maximum torque for electrical connections,8Nm (70lb.ins)
Module outline type code,MP02
12
3
K
2
G
2
G
1
K
1
123
Circuit type,HBN
Circuit type,HBT
Circuit type,HBP
G
1
K
1
123
K
2
G
2
MOUNTING RECOMMENDATIONS
Adequate heatsinking is required to maintain the base
temperature at 75
C if full rated current is to be achieved,Power
dissipation may be calculated by use of V
T(TO)
and r
T
information
in accordance with standard formulae,We can provide
assistance with calculations or choice of heatsink if required.
The heatsink surface must be smooth and flat; a surface finish
of N6 (32μin) and a flatness within 0.05mm (0.002") are
recommended.
Immediately prior to mounting,the heatsink surface should be
lightly scrubbed with fine emery,Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build
up and foreign material,Care should be taken to ensure no
foreign particles remain.
An even coating of thermal compound (eg,Unial) should be
applied to both the heatsink and module mounting surfaces.
This should ideally be 0.05mm (0.002") per surface to ensure
optimum thermal performance.
After application of thermal compound,place the module
squarely over the mounting holes,(or ‘T’ slots) in the heatsink.
Fit and finger tighten the recommended fixing bolts at each end.
Using a torque wrench,continue to tighten the fixing bolts by
rotating each bolt in turn no more than 1/4 of a revolution at a
time,until the required torque of 6Nm (55lbs.ins) is reached on
all bolts at both ends.
It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others,Such action may DAMAGE the module.
www.dynexsemi.com
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor,and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors,Data with respect to air natural,forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps,heatsinks and assemblies,please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel,+44 (0)1522 502753 / 502901,Fax,+44 (0)1522 500020
SALES OFFICES
Benelux,Italy & Switzerland,Tel,+33 (0)1 64 66 42 17,Fax,+33 (0)1 64 66 42 19.
France,Tel,+33 (0)2 47 55 75 52,Fax,+33 (0)2 47 55 75 59.
Germany,Northern Europe,Spain & Rest Of World,Tel,+44 (0)1522 502753 / 502901.
Fax,+44 (0)1522 500020
North America,Tel,(440) 259-2060,Fax,(440) 259-2059,Tel,(949) 733-3005,Fax,(949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE,PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road,Lincoln.
Lincolnshire,LN6 3LF,United Kingdom.
Tel,+44-(0)1522-500500
Fax,+44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used,applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned,No warranty or guarantee express or implied is made regarding the capability,performance or suitability of any product or service,The Company
reserves the right to alter without prior notice the specification,design or price of any product or service,Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment,It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded,These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user,All products and materials are sold and services provided subject to the Company's conditions of sale,which are available on request.
All brand names and product names used in this publication are trademarks,registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail,power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page,to indicate product status,The annotations are as follows:-
Target Information,This is the most tentative form of information and represents a very preliminary specification,No actual design work on the product has been started.
Preliminary Information,The product is in design and development,The datasheet represents the product as it is understood but details may change.
Advance Information,The product design is complete and final characterisation for volume production is well in hand.
No Annotation,The product parameters are fixed and the product is available to datasheet specification.
www.dynexsemi.com
MP02XXX190 Series
MP02XXX190 Series
Phase Control Dual SCR,SCR/Diode Modules
Replaces January 2000 version,DS4479-4.0 DS4479-5.0 July 2002
FEATURES
a73 Dual Device Module
a73 Electrically Isolated Package
a73 Pressure Contact Construction
a73 International Standard Footprint
a73 Alumina (non-toxic) Isolation Medium
APPLICATIONS
a73 Motor Control
a73 Controlled Rectifier Bridges
a73 Heater Control
a73 AC Phase Control
VOLTAGE RATINGS
ORDERING INFORMATION
Order As:
MP02HBT190-12 or MP02HBT190-10 or MP02HBT190-08
MP02HBP190-12 or MP02HBP190-10 or MP02HBP190-08
MP02HBN190-12 or MP02HBN190-10 or MP02HBN190-08
Note,When ordering,please use the complete part number.
KEY PARAMETERS
V
DRM
1200V
I
TSM
5500A
I
T(AV)(per arm)
190A
V
isol
3000V
Code Circuit
HBT
HBP
HBN
Fig.1 Circuit diagrams
123
Fig,2 Electrical connections - (not to scale)
Module type code,MP02.
For further information see Package Details.
Lower voltage grades available.
Repetitive
Peak
Voltages
V
DRM
V
RRM
Type
Number
1200
1000
1000
MP02XXX190-12
MP02XXX190-10
MP02XXX190-08
T
vj
= 125
o
C
I
DRM
= I
RRM
= 30mA
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Conditions
2/8
www.dynexsemi.com
MP02XXX190 Series
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device,In extreme
conditions,as with all semiconductors,this may include potentially hazardous rupture of the package,Appropriate safety
precautions should always be followed,Exposure to Absolute Maximum Ratings may affect device reliability.
Test Conditions
Half wave resistive load T
case
= 75?C
T
case
= 85?C
T
case
= 75?C
10ms half sine,T
j
= 125?C
V
R
= 0
10ms half sine,T
j
= 125?C
V
R
= 50% V
DRM
Commoned terminals to base plate.
AC RMS,1 min,50Hz
Symbol
I
T(AV)
I
T(RMS
I
TSM
I
2
t
I
TSM
I
2
t
V
isol
Units
A
A
A
kA
A
2
s
kA
A
2
s
V
Max.
190
160
300
6.8
231 x 10
3
5.5
150 x 10
3
3000
Parameter
Mean on-state current
RMS value
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Isolation voltage
Test Conditions
dc
Half wave
3 Phase
Mounting torque = 6Nm
with mounting compound
Reverse (blocking)
-
Mounting - M6
Electrical connections - M6
-
Parameter
Thermal resistance - junction to case
(per thyristor or diode)
Thermal resistance - case to heatsink
(per thyristor or diode)
Virtual junction temperature
Storage temperature range
Screw torque
Weight (nominal)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-hs)
T
vj
T
stg
-
-
Units
C/kW
C/kW
C/kW
C/kW
C
C
Nm (lb.ins)
Nm (lb.ins)
g
Max.
0.21
0.22
0.23
0.07
125
125
6 (55)
5 (44)
350
Min.
-
-
-
-
-
–40
-
-
-
3/8
www.dynexsemi.com
MP02XXX190 Series
Units
mA
V/μs
A/μs
V
m?
Test Conditions
At V
RRM
/V
DRM
,T
j
= 125?C
To 67% V
DRM
,T
j
= 125?C
From 67% V
DRM
to 400A,Repetitive 50Hz
Gate source 20V,20?,
t
r
= 0.5μs,T
j
= 125?C
At T
vj
= 125?C,See note 1
At T
vj
= 125?C,See note 1
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
V
T(TO)
r
T
Max.
30
1000
500
0.88
0.7
Min.
-
-
-
-
-
Note 1,The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only,Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V,T
case
= 25
o
C
V
DRM
= 5V,T
case
= 25
o
C
At V
DRM
,T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig,5
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3.0
150
0.25
30
0.25
5
10
100
5
Units
V
mA
V
V
V
V
A
W
W
4/8
www.dynexsemi.com
MP02XXX190 Series
1.0 1.5 2.0 2.5
Instantaneous on-state voltage,V
T
- (V)
0
500
1000
1500
2000
Instantaneous on-state current,I
T
- (A)
Measured under pulse conditions
T
j
= 125?C
Fig,6 Transient thermal impedance - dc
Fig,3 Maximum (limit) on-state characteristics Fig,4 Surge (non-repetitive) on-state current vs time
(Thyristor or diode with 50% V
RRM
at T
case
= 125?C)
Fig,5 Gate characteristics
0.001 0.010 0.100 1.0 10 100
Time - (s)
0
0.1
0.2
0.3
Thermal impedance - (
C/W)
R
th(j-hs)
R
th(j-c)
1010.10.010.001
Gate trigger current,I
GT
- (A)
100
10
1
0.1
Gate trigger voltage,V
GT
- (V)
100W
50W
20W
10W
5W
Region of certain
triggering
Upper limit 95%
Lower
limit 5%
T
j
= 125
C
T
j
= 25
C
T
j
= -40
C
V
GD
I
FGM
20
15
10
5
0
Peak half sine wave on-state current - (kA)
1101234550
ms Cycles at 50Hz
Duration
50
100
I
2
t value - (A
2
s x 10
3
)
I
2
t
I
2
t =?
2
x t
2
150
10 20 30
5/8
www.dynexsemi.com
MP02XXX190 Series
Fig,7 On-state power loss per arm vs on-state current at
specified conduction angles,sine wave 50/60Hz
Fig,8 On-state power loss per arm vs on-state current at
specified conduction angles,square wave 50/60Hz
Fig,9 Maximum permissible case temperature vs on-state
current at specified conduction angles,sine wave 50/60Hz
Fig,10 Maximum permissible case temperature vs on-state
current at specified conduction angles,square wave 50/60Hz
0 50 100 150 200 250
Mean on-state current,I
T(AV)
- (A)
300
250
200
150
100
50
0
On-state power loss per device - (W)
180?
120?
90?
60?
30?
0 50 100 150 200 250 300
Mean on-state current,I
T(AV)
- (A)
400
350
300
250
200
150
100
50
0
On-state power loss per device - (W)
180?
120?
90?
60?
30?
d.c.
0 50 100 150 200 250
Mean on-state current,I
T(AV)
- (A)
120
100
80
60
40
20
0
Maximum permissible case temperature - (
C)
180?120?90?60?30?
140
0 50 100 150 200 250 300
Mean on-state current,I
T(AV)
- (A)
120
100
80
60
40
20
0
Maximum permissible case temperature - (
C)
180?120?90?60?30?
140
d.c.
6/8
www.dynexsemi.com
MP02XXX190 Series
Fig,11 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for
various values of heatsink thermal resistance
(Note,R
th(hs-a)
values given above are true heatsink thermal resistances to ambient and already account for R
th(c-hs)
module contact thermal)
Fig,12 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for
various values of heatsink thermal resistance
(Note,R
th(hs-a)
values given above are true heatsink thermal resistances to ambient and already account for R
th(c-hs)
module contact thermal)
040801200 20 400100 300
1200
1000
800
600
400
200
0
Total power - (W)
1006020
Maximum ambient temperature - (?C) D.C,output current - (A)
R
th(hs-a)
C/W0.02
0.04
0.08
0.10
0.12
0.15
0.20
0.40
0.30
R - Load
L - Load
040801200 200 400100 300
1200
1000
800
600
400
200
0
Total power - (W)
1006020
Maximum ambient temperature - (?C) D.C,output current - (A)
R & L- Load
R
th(hs-a)
C/W
0.020.04
0.08
0.10
0.12
0.15
0.20
0.30
0.40
7/8
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MP02XXX190 Series
PACKAGE DETAILS
For further package information,please contact Customer Services,All dimensions in mm,unless stated otherwise.
DO NOT SCALE.
23 23 24
13
80
34
30
94
3x M6
12.8
2 holes?6.5
123
24
5
15
K
2
G
2
K
1 G
1
Nominal weight,350g
Recommended fixings for mounting,M6 socket head cap screws
Recommended mounting torque,6Nm (55lb.ins)
Recommended torque for electrical connections,5Nm (44lb.ins)
Maximum torque for electrical connections,8Nm (70lb.ins)
Module outline type code,MP02
12
3
K
2
G
2
G
1
K
1
123
Circuit type,HBN
Circuit type,HBT
Circuit type,HBP
G
1
K
1
123
K
2
G
2
MOUNTING RECOMMENDATIONS
Adequate heatsinking is required to maintain the base
temperature at 75
C if full rated current is to be achieved,Power
dissipation may be calculated by use of V
T(TO)
and r
T
information
in accordance with standard formulae,We can provide
assistance with calculations or choice of heatsink if required.
The heatsink surface must be smooth and flat; a surface finish
of N6 (32μin) and a flatness within 0.05mm (0.002") are
recommended.
Immediately prior to mounting,the heatsink surface should be
lightly scrubbed with fine emery,Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build
up and foreign material,Care should be taken to ensure no
foreign particles remain.
An even coating of thermal compound (eg,Unial) should be
applied to both the heatsink and module mounting surfaces.
This should ideally be 0.05mm (0.002") per surface to ensure
optimum thermal performance.
After application of thermal compound,place the module
squarely over the mounting holes,(or ‘T’ slots) in the heatsink.
Fit and finger tighten the recommended fixing bolts at each end.
Using a torque wrench,continue to tighten the fixing bolts by
rotating each bolt in turn no more than 1/4 of a revolution at a
time,until the required torque of 6Nm (55lbs.ins) is reached on
all bolts at both ends.
It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others,Such action may DAMAGE the module.
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor,and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors,Data with respect to air natural,forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps,heatsinks and assemblies,please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel,+44 (0)1522 502753 / 502901,Fax,+44 (0)1522 500020
SALES OFFICES
Benelux,Italy & Switzerland,Tel,+33 (0)1 64 66 42 17,Fax,+33 (0)1 64 66 42 19.
France,Tel,+33 (0)2 47 55 75 52,Fax,+33 (0)2 47 55 75 59.
Germany,Northern Europe,Spain & Rest Of World,Tel,+44 (0)1522 502753 / 502901.
Fax,+44 (0)1522 500020
North America,Tel,(440) 259-2060,Fax,(440) 259-2059,Tel,(949) 733-3005,Fax,(949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE,PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road,Lincoln.
Lincolnshire,LN6 3LF,United Kingdom.
Tel,+44-(0)1522-500500
Fax,+44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used,applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned,No warranty or guarantee express or implied is made regarding the capability,performance or suitability of any product or service,The Company
reserves the right to alter without prior notice the specification,design or price of any product or service,Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment,It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded,These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user,All products and materials are sold and services provided subject to the Company's conditions of sale,which are available on request.
All brand names and product names used in this publication are trademarks,registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail,power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page,to indicate product status,The annotations are as follows:-
Target Information,This is the most tentative form of information and represents a very preliminary specification,No actual design work on the product has been started.
Preliminary Information,The product is in design and development,The datasheet represents the product as it is understood but details may change.
Advance Information,The product design is complete and final characterisation for volume production is well in hand.
No Annotation,The product parameters are fixed and the product is available to datasheet specification.
