1)
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
V
DSM
= 1800 V
I
TAVM
= 730 A
I
TRMS
= 1150 A
I
TSM
= 9000 A
V
T0
=0.8V
r
T
=0.54m?
Phase Control Thyristor
5STP 07D1800
Doc,No,5SYA1027-05 Jan,02
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction,energy and industrial applications
Optimum power handling capability
Blocking
Maximum rated values
1)
Symbol Conditions 5STP 07D1800 5STP 07D1600 5STP 07D1200
V
DRM,
V
RRM
f = 50 Hz,t
p
= 10ms 1800 V 1600 V 1200 V
V
RSM1
t
p
= 5ms,single pulse 2000 V 1800 V 1400 V
dV/dt
crit
Exp,to 0.67 x V
DRM
,T
j
= 125°C 1000 V/μs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Forwarde leakage current I
DRM
V
DRM
,Tj = 125°C 100 mA
Reverse leakage current I
RRM
V
RRM
,Tj = 125°C 100 mA
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
81012kN
Acceleration a Device unclamped 50 m/s
2
Acceleration a Device clamped 100 m/s
2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 0.3 kg
Surface creepage distance D
S
25 mm
Air strike distance D
a
14 mm
5STP 07D1800
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1027-05 Jan,02 page 2 of 6
On-state
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Max,average on-state
current
I
TAVM
Half sine wave,T
c
= 70°C 730 A
RMS on-state current I
TRMS
1150 A
Max,peak non-repetitive
surge current
I
TSM
9000 A
Limiting load integral I
2
t
tp = 10 ms,Tj = 125°C,
V
D
=V
R
= 0 V
405 kA
2
s
Max,peak non-repetitive
surge current
I
TSM
9500 A
Limiting load integral I
2
t
tp = 8.3 ms,Tj = 125°C,
V
D
=V
R
=0 V
374 kA
2
s
Characteristic values
Parameter Symbol Conditions min typ max Unit
On-state voltage V
T
I
T
= 1500 A,T
j
= 125°C 1.6 V
Threshold voltage V
T0
I
T
= 500 A - 1500 A,T
j
= 125°C 0.8 V
Slope resistance r
T
Tj = 125°C 0.54 m?
Holding current I
H
T
j
= 25°C 70 mA
T
j
= 125°C 50 mA
Latching current I
L
T
j
= 25°C 500 mA
T
j
= 125°C 200 mA
Switching
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Critical rate of rise of on-
state current
di/dt
crit
Cont.
f = 50 Hz
150 A/μs
Critical rate of rise of on-
state current
di/dt
crit
T
j
= 125°C,I
TRM
= 1500 A,
V
D
≤ 0.67?V
DRM
,
I
FG
= 2 A,t
r
= 0.5 μs
Cont.
f = 1Hz
1000 A/μs
Circuit-commutated turn-off
time
t
q
T
j
= 125°C,I
TRM
= 1500 A,
V
R
= 200 V,di
T
/dt = -20 A/μs,
V
D
≤ 0.67?V
DRM
,dv
D
/dt = 20 V/μs,
400 μs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Recovery charge Q
rr
T
j
= 125°C,I
TRM
= 1500 A,
V
R
= 200 V,di
T
/dt = -20 A/μs
800 1500 μAs
Delay time t
d VD = 0.4?VDRM,IFG = 2 A,tr = 0.5 μs
3μs
5STP 07D1800
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1027-05 Jan,02 page 3 of 6
Triggering
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Peak forward gate voltage V
FGM
12 V
Peak forward gate current I
FGM
10 A
Peak reverse gate voltage V
RGM
10 V
Gate power loss P
G
For DC gate current 3 W
Average gate power loss P
GAV
see Fig,9
Characteristic values
Parameter Symbol Conditions min typ max Unit
Gate trigger voltage V
GT
T
j
= 25°C 2.6 V
Gate trigger current I
GT
T
j
= 25°C 400 mA
Gate non-trigger voltage V
GD
V
D
= 0.4 x V
DRM
,T
vjmax
= 125°C 0.3 V
Gate non-trigger current I
GD
V
D
= 0.4 x V
DRM
,T
vjmax
= 125°C 10 mA
Thermal
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Operating junction
temperature range
T
j
125 °C
Storage temperature range T
stg
-40 140 °C
Characteristic values
Parameter Symbol Conditions min typ max Unit
Thermal resistance junction
to case
R
th(j-c)
Double side cooled 36 K/kW
R
th(j-c)A
Anode side cooled 70 K/kW
R
th(j-c)C
Cathode side cooled 74 K/kW
Thermal resistance case to
heatsink
R
th(c-h)
Double side cooled 7.5 K/kW
R
th(c-h)
Single side cooled 15 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ithJC
i
Ge5
=
τ
i1 234
R
i
(K/kW) 19.18 9.82 5.45 1.44
τ
i
(s) 0.3862 0.0561 0.0058 0.0024
Fig,1 Transient thermal impedance junction-to case.
5STP 07D1800
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1027-05 Jan,02 page 4 of 6
Fig,2 On-state characteristics,Fig,3 On-state characteristics.
T
j
=125°C,10ms half sine
Fig,4 On-state power dissipation vs,mean on-
state current,Turn - on losses excluded.
Fig,5 Max,permissible case temperature vs.
mean on-state current.
5STP 07D1800
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1027-05 Jan,02 page 5 of 6
Fig,6 Surge on-state current vs,pulse length,Half-
sine wave.
Fig,7 Surge on-state current vs,number of pulses.
Half-sine wave,10 ms,50Hz.
I
GM
I
Gon
100 %
90 %
10 %
I
GM
≈ 2..5 A
I
Gon
≥ 1.5 I
GT
di
G
/dt ≥ 2 A/μs
t
r
≤ 1 μs
t
p
(I
GM
) ≈ 5...20μs
di
G
/dt
t
r
t
p
(I
GM
)
I
G
(t)
t
t
p
(I
Gon
)
Fig,8 Recommendet gate current waveform,Fig,9 Max,peak gate power loss.
Fig,10 Recovery charge vs,decay rate of on-state
current.
Fig,11 Peak reverse recovery current vs,decay rate
of on-state current.
5STP 07D1800
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc,No,5SYA1027-05 Jan,02
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg,Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Fig,12 Device Outline Drawing.