1/22
2003 Dec DP0540011_01
IGBT (Discrete)
Dec,2003
TOSHIBA Semiconductor Company
Discrete Semiconductor Division
Strobe Flash
2/22
2003 Dec DP0540011_01
Diode IGBT
Summary of Discrete for Strobe Flasher
Compact &
Hi-performance
Strobe
Flasher
Low Gate Drive
Normal one,VGE=5V
New Device,VGE=3.3V
Compact & Slim
TSSOP-8 available
Focused smaller one
Guaranteed High Ic
Icp=150A(TSSOP-8 package)
Icp=200A (SOP-8 package)
Compact & Hi-Power
US/S-FLAT & M-FLAT
Released Ip=150A one
with M-FLAT
Compact
Developing NSM(*)
SCR for Xe Lamp Trigger
Thyristor
3/22
2003 Dec DP0540011_01
Discrete devices in Strobe Flasher
NPN + PNP Transistor
or
N-ch + P-ch MOSFETIGBT Drive
Trigger Signal
SCR
for Trigger
Controller
Amplifier
DiodeD/D Conv.
Battery
Diode
IGBT
Voltage Reference
Circuit
Regulator
Xe
Lum
p
CRF02
U02Z300N series
CMC01
GTGG133
GT10G131
New devices
4/22
2003 Dec DP0540011_01
Discrete Line up Example for Strobe Flasher Circuit
Block Package P/N Ratings Major Characteristic
2SC5766 3A/10V hFE=700 to 2000
2SC5738 3.5A/20V hFE=400 to 1000
2SA2061 -2.5A/-20V hFE=200 to 500
SSM3K01T 3.2A/30V 120mW @4V
SSM3J01T -1.7A/-30V 400mW @-4V
SOT-89 2SC5713 4A/10V hFE=400 to 1000
(PW-MINI) 2SA2059 -3A/-20V hFE=200 to 500
TPC6001 6A/20V 30mW @4V
TPC6101 -4.5A/-20V 60mW @-4V
SOT-89 URSF05G49-1P 0.5A/400V with RGK=1k ohms
I-FLAT U1GC44S 1A/400V IFRM=130A
M-FLAT CMC01 1A/400V IFRM=150A
SMQ 1SS399 0.1A/400V 2n1
S-FLAT CRG02 0.7A/400V SMD
DO-41 1ZB100 to 390 100 to 390V/1W Thru hole package
I-FLAT U1ZB100 to 390 100 to 390V/1W SMD
TAR5S33 3.3V/200mA Vout=1.5 to 5.0V with ON/OFF function
TAR5S50 5.0V/200mA
GT10G131 200A/400V VGE=4V Min,drive voltage
GT8G132 150A/400V VGE=4V Min,drive voltage
GT5G131 130A/400V VGE=3V Min,drive voltage
TSSOP-8 GT8G133 150A/400V VGE=4V Min,drive voltage
US6 SSM6L05FU +0.4/-0.2A/±20V N-ｃｈ+P-ｃｈ,2in1
SM6 HN1B04F ±0.5A/±30V NPN+PNP,2in1
USM 2SC4666 150mA/50V hFE=600 to 3600
Diode for Main Circuit
SOP-8
Flasher
IGBT Driver Portion
Diode
SMV
Zener Diode
LDO
VS-6
DC/DC Conv.
Trigger
TSM
5/22
2003 Dec DP0540011_01
IGBT Line up for Strobe Flasher
Have been developed thinner & compact package
Lower gate drive characteristic in latest design rule than previous one
Thinner & Compact Package
De
sign Rule & Gate Drive Voltage
Icp
130A 150A 170A 200A 130A 150A 170A 200A 130A 150A 170A 200A 130A 150A 170A 200A
20V
GT25
G101
GT25
G102
GT5G
102
GT5G
103
GT8 G
103
4th
GT8 G
121
GT8G
131
GT8G
132
GT10
G1 31
GT8 G
133
3.0V
GT5G
131
TO-220FL / SM DPVGE TSSOP-8
4.0V
5th
SOP-8
2nd
12V
3rd
4.5V
Gen.
6/22
2003 Dec DP0540011_01
Th
ru-Hole Type
SMD Type
(Unit in,mm)
DP
The Change of IGBT Package for Strobe Flasher
SOP-8TO-220 Class TSSOP-8
Changed to Compact Package
TO-220FL
TO-220SM
2.5
10.3 MAX
10.6 MAX
10.3 MAX
10.6 MAX
6.8 MAX
5.5
2.5 MAX
4.4
±
0.2
6.0
±
0.3
5.5MAX.
1.5
±
0.2
3.0
6.4
4.4
0.85
±
0.05
7/22
2003 Dec DP0540011_01
[ 1 ] Development Concept *** Available for 3.3V Gate Supply ***
1) Achievement of 3.0V Minimum Gate Drive Voltage by latest design rule
2) Guarantee of Maximum Icp=130A by optimized trench gate design
3) Protection of Gate insulation layer by Zener Diode between gate & emitter
[ 2 ] Low Gate Drive Voltage & Space Merit
1) Low Gate Drive Voltage ( Logic Level )
Available Icp=130A Control at VGE=3.0V Drive
2) Thinner SMD Package,SOP-8 Package
Height 1.5±0.2mm,1.0mm Benefit than DP package
3) Improvement of ESD capability between Gate & Emitter
[ 3 ] Schedule
Under Mass-producing
GT5G131 5th Generation with V
GE
=3.3V
New
Product
8/22
2003 Dec DP0540011_01
[ 1 ] Development Concept *** New Icp=150A ***
1) Available 4.0V Gate Drive
2) Compact Package,Foot Print Area – Just 5.0×6.0mm
Height -- 1.6mm
3) High Gate Drivability due to Low Gate Charge and others by Latest design Rule
4) Protection of Gate insulation layer by Zener Diode between gate & emitter
[ 2 ] Schedule
Under Mass Production
[ 3 ] The Comparison between 5th GT8G132 & 4th GT8G131 ( the detail is shown in page 12 ～13 )
GT8G132 5
th
generation with Icp=150A
New
Product
5th 4th
GT8G132 Gt8G131
(1) Input Capacitance ( at V
CE
=10V,f=1MHz) 2800pF 3800pF
(2) VCE(sat) ( at V
GE
=4V,I
C
=150A) 2.3V 3.0V
( at V
GE
=4V,I
C
=150A,tr=1.0
μ
str=1.5
μ
s
RG
=
51? )
tf=1.6
μ
f=1.9
μ
s
Generation
Type Name
All parameters are described by typical value.
(3) Suiching Speed
9/22
2003 Dec DP0540011_01
GT5G131,Typical Characteristic (1)
0 1 2 3 4 5
Collector to Emitter Voltage V
CE
(V)
Collector Current Ic (A)
0
40
80
120
160
200
GT8G131
GT5G131
Ic – V
CE
Characteristic (@VGE=3V Ic – V
GE
Characteristic
0 1 2 3 4 5
Gate to Emitter Voltage V
GE
(V)
Collector Current Ic (A)
0
40
80
120
160
200
GT8G131
GT5G131
240
280
10/22
2003 Dec DP0540011_01
GT5G131,Typical Characteristic (2)
Limit Value of Collector Current
Tc=25C
0246810
100
110
120
130
140
150
160
170
180
190
200
I
CP
(A)
(pcs)
Tc=70C
0246810
100
110
120
130
140
150
160
170
180
190
200
I
CP
(A)
(pcs)
Test Conditions
VCC=300V
VGE=3V
RG=30?
Tc=25，70℃
0
3V
30?
VCC=300V
The samples shown distribution data as the above are used normal one.
11/22
2003 Dec DP0540011_01
2000
2500
3000
3500
4000
4500
5000
1 10 100330
GT8G132,Typical Characteristic (1)
Cies -VCE
Smaller Input Capacitance by New 5th Design Rule
GT8G132,2800pF（About 25% Smaller )
GT8G131,3800pF
Lower Saturation Voltage by New 5th Design Rule
GT8G132,2.3V（About 25% Lower )
GT8G131,3.0V
( at VGE=4V,ICP=150A )
Collector to Emitter Voltage VCE (V)
Input Ca
pa
citance
C
ies
(pF)
GT8G131
GT8G132
0 1 2 3 4 5
Collector to Emitter Voltage VCE (V)
Co
llecto
r
Cu
rren
t
I
CP
(A)
0
40
80
120
160
200
GT8G131
GT8G132
IC-VCE Characteristic
(@VGE=4V)
12/22
2003 Dec DP0540011_01
Turn on Switching Waveform ( @VGE=4V,RG=51?）
The trigger peak voltage and current to Xe lamp,Higher than conventional one
GT8G132,Typical Characteristic (2)
Type Name
Trigger Peak Voltage
Trigger Peak Current
GT8G132
3.4kV
37A
Switching
Waveform
2.5kV
27A
GT8G131
I
C
(20A/div)
Vt (2kV/div)
V
GE
(2V/div)
V
CE
(50V/div)
1ms/div
13/22
2003 Dec DP0540011_01
[ 1 ] Development Concept *** Thinner and Compact ***
1) Reduction of Foot Print Area by Compact package
Foot Print Area,Typical 3.0×6.4mm ( about 40% compact than SOP-8 package )
Height,Typical 1.05mm ( 0.75mm less than SOP–8 Package )
2) Available Higher Icp Control
Target Specification,Icp=150A at V
GE
=4.0V
3) Protection of Gate insulation layer by Zener Diode between Gate & Emitter
[ 2 ] Schedule
Mass Production
TSSOP-8 Package GT8G133
Hot
News
This is very suitable for DSC and Conventional
Camera’s strobe flasher application,since
these system is required a narrow mounting
space,
SOP-8TSSOP-8
h=1.05mm h=1.8 mm
3.0mm Typical
6.4mm Typical 6mm Typical
5．0mm Typical
14/22
2003 Dec DP0540011_01
[ 1 ] Development Concept *** New Icp=200A ***
1) Available 4.0V Gate Drive
2) Compact Package,SOP-8
Foot Print Area – Just 5.0×6.0mm Height -- 1.6mm
3) High Gate Drivability due to Low Gate Charge and others by Latest design Rule
4) Protection of Gate insulation layer by Zener Diode between gate & emitter
[ 2 ] Schedule
Mass Production
Icp=200A GT10G131
Hot
News
15/22
2003 Dec DP0540011_01
IGBT
IGBT
Xe Lamp
R
Main
Capacitor
Trigger
Trans.
Thyristor
VGE
IC
Vtr
Ig
t
t
t
t
t
t
t
t
t
(Ixe)
VGE
Ig
IC
(Ixe)
Vtr
Ig
Gate Signal to Thyristor
(1) Xe Lamp triggered by IGBT
(2) Xe Lamp triggered by Thyristor
(a) IGBT Turn on
(b) Xe Lamp triggered
(c) Flashing
(d) IGBT Turn off
(a) IGBT Turn on
(b) Thyristor Turn on
(c) Xe Lamp triggered
(d) Flashing
(e) IGBT turn off
Typical Operation of Strobe Flasher Circuit
Xe Lamp
R
Main
Capacitor
Trigger
Trans.
16/22
2003 Dec DP0540011_01
IGBT Gate Drive (1) (Applying Vcc=5V)
3V
20k
1.2k
470
2SC4666
1.2k
470
Recommended Rg
51
IGBT
GT8G133
GT8G132
GT8G131
GT8G121
GT8G121
GT10G131
Vcc=5V
0
SSM6L05FU
P-ch
N-ch
17/22
2003 Dec DP0540011_01
IGBT Gate Drive (2) (Applying Vcc=5V)
3V
20k
HN1B04FE
20k
30k
Recommended Rg
51
Vcc=5V
0
HN4C08J
NPN
PNP
2.4k?
3k
510
IGBT
GT8G133
GT8G132
GT8G131
GT8G121
GT8G121
GT10G131
18/22
2003 Dec DP0540011_01
IGBT Gate Drive (3) (Applying Vcc=5V)
3V
20k
910
91
2SC4666
1.2k
470
30
Recommended Rg
IGBT
Vcc=3.3V
0
SSM6L05FU
P-ch
N-ch
GT5G103
19/22
2003 Dec DP0540011_01
Hi-Current Diode with M-FLAT
TM
Package CMC01
Hi-Current Diode with M-FLAT
TM
Package
? Feature ?
Package Height,50% than Conventional one
I-FLAT,1.9mm Typical → M-FLAT,0.98mm Typical
Guaranteed Large Surge Current
I
FRM
=150A ( at CM=1000μF )
Schedule
Sample,OK,MP,OK
? Line up ?
I
FRM
I
RRM
CR Discharge I
FM
V
RRM
=400V
U1GC44S I-FLAT 400V 1A 130A 1.0V max 1.0A 10μA max
CMC01 M-FLAT 400V 1A 150A 1.0V max 1.0A 10μA max
Electrical CharacteristicMaximum Ratings
V
FM
RemarksP/N Package
V
RRM
I
F(AV)
New
Xe
Lum
p
20/22
2003 Dec DP0540011_01
Performance Comparison in Application Circuit
Performance Comparison in Application Circuit
I
FRM
CR Discharge Waveform,
The Period,1cycle per 4s
0.368×Ι
FRM
0
τ t
Amplifier
Xe
Lum
p
τ (C*R)=1ms
U1GC44S
02468
150
170
190
210
230
250
270
290
310
330
350
I
FR
M
(A)
(pcs)
CMC01
02468
150
170
190
210
230
250
270
290
310
330
350
I
FR
M
(A)
(pcs)
21/22
2003 Dec DP0540011_01
S6A37,Thyristor (SCR) for Xe Lamp Trigger
S6A37,Thyristor (SCR) for Xe Lamp Trigger
PW-MINI
(Unit in mm）
4.6
4.2
t=1.6
NSM
(Unit in mm)
2.9
2.5 t=1.1
Space
1/3
Coming soon,
Released
Rating & Characteristic
y VDRM=400V
y IT(AV)=0.3A
y IGT=1mA
Feature
y SOT-23 Package base
y High Output Voltage of Trigger Transformer
22/22
2003 Dec DP0540011_01
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products,No responsibility is assumed
by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products,
Nevertheless,semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability
to physical stress.
It is the responsibility of the buyer,when utilizing TOSHIBA products,to comply with the standards of safety in making a safe design
for the entire system,and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of
human life,bodily injury or damage to property.
In developing your designs,please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications.
Also,please keep in mind the precautions and conditions set forth in the,Handling Guide for Semiconductor Devices,” or
“TOSHIBA Semiconductor Reliability Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
（computer,personal equipment,office equipment,measuring equipment,industrial robotics,domestic appliances,etc.）.
These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality
and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury （“Unintended Usage”）,
Unintended Usage include atomic energy control instruments,airplane or spaceship instruments,transportation instruments,traffic
signal instruments,combustion control instruments,medical instruments,all types of safety devices,etc.
Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold,under any
law and regulations,
2003 Dec DP0540011_01
IGBT (Discrete)
Dec,2003
TOSHIBA Semiconductor Company
Discrete Semiconductor Division
Strobe Flash
2/22
2003 Dec DP0540011_01
Diode IGBT
Summary of Discrete for Strobe Flasher
Compact &
Hi-performance
Strobe
Flasher
Low Gate Drive
Normal one,VGE=5V
New Device,VGE=3.3V
Compact & Slim
TSSOP-8 available
Focused smaller one
Guaranteed High Ic
Icp=150A(TSSOP-8 package)
Icp=200A (SOP-8 package)
Compact & Hi-Power
US/S-FLAT & M-FLAT
Released Ip=150A one
with M-FLAT
Compact
Developing NSM(*)
SCR for Xe Lamp Trigger
Thyristor
3/22
2003 Dec DP0540011_01
Discrete devices in Strobe Flasher
NPN + PNP Transistor
or
N-ch + P-ch MOSFETIGBT Drive
Trigger Signal
SCR
for Trigger
Controller
Amplifier
DiodeD/D Conv.
Battery
Diode
IGBT
Voltage Reference
Circuit
Regulator
Xe
Lum
p
CRF02
U02Z300N series
CMC01
GTGG133
GT10G131
New devices
4/22
2003 Dec DP0540011_01
Discrete Line up Example for Strobe Flasher Circuit
Block Package P/N Ratings Major Characteristic
2SC5766 3A/10V hFE=700 to 2000
2SC5738 3.5A/20V hFE=400 to 1000
2SA2061 -2.5A/-20V hFE=200 to 500
SSM3K01T 3.2A/30V 120mW @4V
SSM3J01T -1.7A/-30V 400mW @-4V
SOT-89 2SC5713 4A/10V hFE=400 to 1000
(PW-MINI) 2SA2059 -3A/-20V hFE=200 to 500
TPC6001 6A/20V 30mW @4V
TPC6101 -4.5A/-20V 60mW @-4V
SOT-89 URSF05G49-1P 0.5A/400V with RGK=1k ohms
I-FLAT U1GC44S 1A/400V IFRM=130A
M-FLAT CMC01 1A/400V IFRM=150A
SMQ 1SS399 0.1A/400V 2n1
S-FLAT CRG02 0.7A/400V SMD
DO-41 1ZB100 to 390 100 to 390V/1W Thru hole package
I-FLAT U1ZB100 to 390 100 to 390V/1W SMD
TAR5S33 3.3V/200mA Vout=1.5 to 5.0V with ON/OFF function
TAR5S50 5.0V/200mA
GT10G131 200A/400V VGE=4V Min,drive voltage
GT8G132 150A/400V VGE=4V Min,drive voltage
GT5G131 130A/400V VGE=3V Min,drive voltage
TSSOP-8 GT8G133 150A/400V VGE=4V Min,drive voltage
US6 SSM6L05FU +0.4/-0.2A/±20V N-ｃｈ+P-ｃｈ,2in1
SM6 HN1B04F ±0.5A/±30V NPN+PNP,2in1
USM 2SC4666 150mA/50V hFE=600 to 3600
Diode for Main Circuit
SOP-8
Flasher
IGBT Driver Portion
Diode
SMV
Zener Diode
LDO
VS-6
DC/DC Conv.
Trigger
TSM
5/22
2003 Dec DP0540011_01
IGBT Line up for Strobe Flasher
Have been developed thinner & compact package
Lower gate drive characteristic in latest design rule than previous one
Thinner & Compact Package
De
sign Rule & Gate Drive Voltage
Icp
130A 150A 170A 200A 130A 150A 170A 200A 130A 150A 170A 200A 130A 150A 170A 200A
20V
GT25
G101
GT25
G102
GT5G
102
GT5G
103
GT8 G
103
4th
GT8 G
121
GT8G
131
GT8G
132
GT10
G1 31
GT8 G
133
3.0V
GT5G
131
TO-220FL / SM DPVGE TSSOP-8
4.0V
5th
SOP-8
2nd
12V
3rd
4.5V
Gen.
6/22
2003 Dec DP0540011_01
Th
ru-Hole Type
SMD Type
(Unit in,mm)
DP
The Change of IGBT Package for Strobe Flasher
SOP-8TO-220 Class TSSOP-8
Changed to Compact Package
TO-220FL
TO-220SM
2.5
10.3 MAX
10.6 MAX
10.3 MAX
10.6 MAX
6.8 MAX
5.5
2.5 MAX
4.4
±
0.2
6.0
±
0.3
5.5MAX.
1.5
±
0.2
3.0
6.4
4.4
0.85
±
0.05
7/22
2003 Dec DP0540011_01
[ 1 ] Development Concept *** Available for 3.3V Gate Supply ***
1) Achievement of 3.0V Minimum Gate Drive Voltage by latest design rule
2) Guarantee of Maximum Icp=130A by optimized trench gate design
3) Protection of Gate insulation layer by Zener Diode between gate & emitter
[ 2 ] Low Gate Drive Voltage & Space Merit
1) Low Gate Drive Voltage ( Logic Level )
Available Icp=130A Control at VGE=3.0V Drive
2) Thinner SMD Package,SOP-8 Package
Height 1.5±0.2mm,1.0mm Benefit than DP package
3) Improvement of ESD capability between Gate & Emitter
[ 3 ] Schedule
Under Mass-producing
GT5G131 5th Generation with V
GE
=3.3V
New
Product
8/22
2003 Dec DP0540011_01
[ 1 ] Development Concept *** New Icp=150A ***
1) Available 4.0V Gate Drive
2) Compact Package,Foot Print Area – Just 5.0×6.0mm
Height -- 1.6mm
3) High Gate Drivability due to Low Gate Charge and others by Latest design Rule
4) Protection of Gate insulation layer by Zener Diode between gate & emitter
[ 2 ] Schedule
Under Mass Production
[ 3 ] The Comparison between 5th GT8G132 & 4th GT8G131 ( the detail is shown in page 12 ～13 )
GT8G132 5
th
generation with Icp=150A
New
Product
5th 4th
GT8G132 Gt8G131
(1) Input Capacitance ( at V
CE
=10V,f=1MHz) 2800pF 3800pF
(2) VCE(sat) ( at V
GE
=4V,I
C
=150A) 2.3V 3.0V
( at V
GE
=4V,I
C
=150A,tr=1.0
μ
str=1.5
μ
s
RG
=
51? )
tf=1.6
μ
f=1.9
μ
s
Generation
Type Name
All parameters are described by typical value.
(3) Suiching Speed
9/22
2003 Dec DP0540011_01
GT5G131,Typical Characteristic (1)
0 1 2 3 4 5
Collector to Emitter Voltage V
CE
(V)
Collector Current Ic (A)
0
40
80
120
160
200
GT8G131
GT5G131
Ic – V
CE
Characteristic (@VGE=3V Ic – V
GE
Characteristic
0 1 2 3 4 5
Gate to Emitter Voltage V
GE
(V)
Collector Current Ic (A)
0
40
80
120
160
200
GT8G131
GT5G131
240
280
10/22
2003 Dec DP0540011_01
GT5G131,Typical Characteristic (2)
Limit Value of Collector Current
Tc=25C
0246810
100
110
120
130
140
150
160
170
180
190
200
I
CP
(A)
(pcs)
Tc=70C
0246810
100
110
120
130
140
150
160
170
180
190
200
I
CP
(A)
(pcs)
Test Conditions
VCC=300V
VGE=3V
RG=30?
Tc=25，70℃
0
3V
30?
VCC=300V
The samples shown distribution data as the above are used normal one.
11/22
2003 Dec DP0540011_01
2000
2500
3000
3500
4000
4500
5000
1 10 100330
GT8G132,Typical Characteristic (1)
Cies -VCE
Smaller Input Capacitance by New 5th Design Rule
GT8G132,2800pF（About 25% Smaller )
GT8G131,3800pF
Lower Saturation Voltage by New 5th Design Rule
GT8G132,2.3V（About 25% Lower )
GT8G131,3.0V
( at VGE=4V,ICP=150A )
Collector to Emitter Voltage VCE (V)
Input Ca
pa
citance
C
ies
(pF)
GT8G131
GT8G132
0 1 2 3 4 5
Collector to Emitter Voltage VCE (V)
Co
llecto
r
Cu
rren
t
I
CP
(A)
0
40
80
120
160
200
GT8G131
GT8G132
IC-VCE Characteristic
(@VGE=4V)
12/22
2003 Dec DP0540011_01
Turn on Switching Waveform ( @VGE=4V,RG=51?）
The trigger peak voltage and current to Xe lamp,Higher than conventional one
GT8G132,Typical Characteristic (2)
Type Name
Trigger Peak Voltage
Trigger Peak Current
GT8G132
3.4kV
37A
Switching
Waveform
2.5kV
27A
GT8G131
I
C
(20A/div)
Vt (2kV/div)
V
GE
(2V/div)
V
CE
(50V/div)
1ms/div
13/22
2003 Dec DP0540011_01
[ 1 ] Development Concept *** Thinner and Compact ***
1) Reduction of Foot Print Area by Compact package
Foot Print Area,Typical 3.0×6.4mm ( about 40% compact than SOP-8 package )
Height,Typical 1.05mm ( 0.75mm less than SOP–8 Package )
2) Available Higher Icp Control
Target Specification,Icp=150A at V
GE
=4.0V
3) Protection of Gate insulation layer by Zener Diode between Gate & Emitter
[ 2 ] Schedule
Mass Production
TSSOP-8 Package GT8G133
Hot
News
This is very suitable for DSC and Conventional
Camera’s strobe flasher application,since
these system is required a narrow mounting
space,
SOP-8TSSOP-8
h=1.05mm h=1.8 mm
3.0mm Typical
6.4mm Typical 6mm Typical
5．0mm Typical
14/22
2003 Dec DP0540011_01
[ 1 ] Development Concept *** New Icp=200A ***
1) Available 4.0V Gate Drive
2) Compact Package,SOP-8
Foot Print Area – Just 5.0×6.0mm Height -- 1.6mm
3) High Gate Drivability due to Low Gate Charge and others by Latest design Rule
4) Protection of Gate insulation layer by Zener Diode between gate & emitter
[ 2 ] Schedule
Mass Production
Icp=200A GT10G131
Hot
News
15/22
2003 Dec DP0540011_01
IGBT
IGBT
Xe Lamp
R
Main
Capacitor
Trigger
Trans.
Thyristor
VGE
IC
Vtr
Ig
t
t
t
t
t
t
t
t
t
(Ixe)
VGE
Ig
IC
(Ixe)
Vtr
Ig
Gate Signal to Thyristor
(1) Xe Lamp triggered by IGBT
(2) Xe Lamp triggered by Thyristor
(a) IGBT Turn on
(b) Xe Lamp triggered
(c) Flashing
(d) IGBT Turn off
(a) IGBT Turn on
(b) Thyristor Turn on
(c) Xe Lamp triggered
(d) Flashing
(e) IGBT turn off
Typical Operation of Strobe Flasher Circuit
Xe Lamp
R
Main
Capacitor
Trigger
Trans.
16/22
2003 Dec DP0540011_01
IGBT Gate Drive (1) (Applying Vcc=5V)
3V
20k
1.2k
470
2SC4666
1.2k
470
Recommended Rg
51
IGBT
GT8G133
GT8G132
GT8G131
GT8G121
GT8G121
GT10G131
Vcc=5V
0
SSM6L05FU
P-ch
N-ch
17/22
2003 Dec DP0540011_01
IGBT Gate Drive (2) (Applying Vcc=5V)
3V
20k
HN1B04FE
20k
30k
Recommended Rg
51
Vcc=5V
0
HN4C08J
NPN
PNP
2.4k?
3k
510
IGBT
GT8G133
GT8G132
GT8G131
GT8G121
GT8G121
GT10G131
18/22
2003 Dec DP0540011_01
IGBT Gate Drive (3) (Applying Vcc=5V)
3V
20k
910
91
2SC4666
1.2k
470
30
Recommended Rg
IGBT
Vcc=3.3V
0
SSM6L05FU
P-ch
N-ch
GT5G103
19/22
2003 Dec DP0540011_01
Hi-Current Diode with M-FLAT
TM
Package CMC01
Hi-Current Diode with M-FLAT
TM
Package
? Feature ?
Package Height,50% than Conventional one
I-FLAT,1.9mm Typical → M-FLAT,0.98mm Typical
Guaranteed Large Surge Current
I
FRM
=150A ( at CM=1000μF )
Schedule
Sample,OK,MP,OK
? Line up ?
I
FRM
I
RRM
CR Discharge I
FM
V
RRM
=400V
U1GC44S I-FLAT 400V 1A 130A 1.0V max 1.0A 10μA max
CMC01 M-FLAT 400V 1A 150A 1.0V max 1.0A 10μA max
Electrical CharacteristicMaximum Ratings
V
FM
RemarksP/N Package
V
RRM
I
F(AV)
New
Xe
Lum
p
20/22
2003 Dec DP0540011_01
Performance Comparison in Application Circuit
Performance Comparison in Application Circuit
I
FRM
CR Discharge Waveform,
The Period,1cycle per 4s
0.368×Ι
FRM
0
τ t
Amplifier
Xe
Lum
p
τ (C*R)=1ms
U1GC44S
02468
150
170
190
210
230
250
270
290
310
330
350
I
FR
M
(A)
(pcs)
CMC01
02468
150
170
190
210
230
250
270
290
310
330
350
I
FR
M
(A)
(pcs)
21/22
2003 Dec DP0540011_01
S6A37,Thyristor (SCR) for Xe Lamp Trigger
S6A37,Thyristor (SCR) for Xe Lamp Trigger
PW-MINI
(Unit in mm）
4.6
4.2
t=1.6
NSM
(Unit in mm)
2.9
2.5 t=1.1
Space
1/3
Coming soon,
Released
Rating & Characteristic
y VDRM=400V
y IT(AV)=0.3A
y IGT=1mA
Feature
y SOT-23 Package base
y High Output Voltage of Trigger Transformer
22/22
2003 Dec DP0540011_01
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products,No responsibility is assumed
by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products,
Nevertheless,semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability
to physical stress.
It is the responsibility of the buyer,when utilizing TOSHIBA products,to comply with the standards of safety in making a safe design
for the entire system,and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of
human life,bodily injury or damage to property.
In developing your designs,please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications.
Also,please keep in mind the precautions and conditions set forth in the,Handling Guide for Semiconductor Devices,” or
“TOSHIBA Semiconductor Reliability Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
（computer,personal equipment,office equipment,measuring equipment,industrial robotics,domestic appliances,etc.）.
These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality
and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury （“Unintended Usage”）,
Unintended Usage include atomic energy control instruments,airplane or spaceship instruments,transportation instruments,traffic
signal instruments,combustion control instruments,medical instruments,all types of safety devices,etc.
Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold,under any
law and regulations,
