ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
V
DRM
= 4500 V
I
TGQM
= 2200 A
I
TSM
= 18.8 kA
V
T0
=1.65V
r
T
=0.6
m?
V
DClink
= 2800 V
Reverse Conducting Integrated
Gate-Commutated Thyristor
5SHX 26L4503
Doc,No,5SYA1230-01 Feb,02
Direct fiber optic controll and status
Fast response (t
don
< 3 μs,t
doff
< 6 μs)
Precise timing
Patented free-floating silicon technology
High reliability
Very high EMI immunity
Cosmic radiation withstand rating
Blocking
V
DRM
Repetitive peak off-state voltage 4500 V V
GR
≥ 2V
I
DRM
Repetitive peak off-state current ≤ 50 mA V
D
= V
DRM
V
GR
≥ 2V
V
DClink
Permanent DC voltage for 100
FIT failure rate
2800 V
0 ≤ T
j
≤ 115 °C,Ambient cosmic
radiation at sea level in open air.
Mechanical data (see Fig,9)
min,42 kN
F
m
Mounting force
max,46 kN
D
p
Pole-piece diameter 85 mm ±0.1 mm
H Housing thickness 26 mm ±0.5 mm
m Weight IGCT 3.5 kg
D
s
Surface creepage distance ≥ 33 mm
D
a
Air strike distance ≥ 13 mm
l Length IGCT 451 mm +0/-0.5 mm
h Height IGCT 40 mm ±1.0 mm
w Width IGCT 213 mm +0/-0.5 mm
5SHX 26L4503
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1230-01 Feb,02 page 2 of 9
GCT Data
On-state (see Fig,1)
I
TAVM
Max,average on-state current 855 A Half sine wave,T
C
= 85 °C
I
TRMS
Max,RMS on-state current 1345 A
18.8 kA t
p
=10ms
I
TSM
Max,peak non-repetitive
surge current
33.6 kA t
p
=1ms
T
j
= 115 °C
After surge:
V
D
= V
R
= 0V
1.78x10
6
A
2
st
p
=10ms
I
2
t Limiting load integral
0.56x10
6
A
2
st
p
V
T
On-state voltage ≤ 3V I
T
= 2200 A
V
T0
Threshold voltage 1.65 V
r
T
Slope resistance 0.6 m?
I
T
= 400 - 3000 A
T
j
= 115 °C
Turn-on switching
f = 500 Hz T
j
= 115 °C
di/dt
crit
Max,rate of rise of on-state
current
650 A/μs
I
T
= 2200 A V
D
= 3200 V
t
don
Turn-on delay time ≤ 3μs V
D
= 2700 V T
j
= 115 °C
t
r
Rise time ≤ 1μs I
T
= 2200 A di/dt = 550 A/μs
t
on (min)
Min,on-time 10 μs R
S
=0.63? L
i
=4.9μH
E
on
Turn-on energy per pulse ≤ 0.85 J C
CL
=4μFL
CL
=0.6μH
Turn-off switching (see Fig,2,11,12)
V
DM
≤ V
DRM
T
j
= 115 °C
I
TGQM
Max,controllable turn-off current 2200 A
V
D
= 2700 V L
CL
≤ 0.6 μH
V
DM
≤ V
DRM
T
j
= 115 °C
I
TGQM2
Max,controllable turn-off current 1100 A
V
D
= 3200 V L
CL
≤ 0.6 μH
t
doff
Turn-off delay time ≤ 6μs V
D
= 2700 V V
DM
≤ V
DRM
t
f
Fall time ≤ 1μs T
j
= 115 °C R
s
=0.63?
t
off (min)
Min,off-time 10 μs I
TGQ
=I
TGQM
L
i
=4.9μH
E
off
Turn-off energy per pulse ≤ 8.7 J C
CL
=4μFL
CL
≤ 0.6 μH
5SHX 26L4503
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1230-01 Feb,02 page 3 of 9
Diode Data
On-state (see Fig,4)
I
FAVM
Max,average on-state current 315 A
I
FRMS
Max,RMS on-state current 500 A
Half sine wave,T
C
= 85 °C
16.9 kA t
p
=10msT
j
= 115 °C
I
FSM
Max,peak non-repetitive surge
current
42.8 kA t
p
= 1 ms After surge:
1.44×10
6
A
2
st
p
=10V
F
= V
R
= 0V
I
2
t Limiting load integral
0.91×10
6
A
2
st
p
ms
V
F
On-state voltage ≤ 7.05 V I
F
= 2200 A
V
F0
Threshold voltage 3.08 V T
j
= 115 °C
r
F
Slope resistance 1.8 m?
I
F
= 400 - 3000 A
Turn-off switching (see Fig,5,6,11,12)
I
F
= 2200 A T
j
= 115 °C
di/dt
crit
Max,rate of rise of on-state
current
650 A/μs
V
CL
= 3200 V
I
rr
Reverse recovery current ≤ 900 A V
CL
= 2700 V I
F
= 2200 A
E
rr
Turn-off energy ≤ 4 J di/dt = 550 A/μs T
j
= 115 °C
R
s
=0.63? L
i
=4.9μH
C
CL
=4μFL
CL
=0.6μH
Gate Unit
Power supply (see Fig,9 to 11)
V
GDC
Gate Unit voltage 20 ±0.5 V
DC
Without galvanic isolation to power
circuit.
P
Gin
Gate Unit power consumption ≤ 54 W f
S
= 500 Hz,I
TGQ AV
= 915 A,δ = 0.9
X1 Gate Unit power connector AMP 640389-4 MTA Friction Lock Header,right angle
(Note 1)
Optical control input/output
Note 3
(see Fig,9,10,11)
P
on CS
Optical input power > -21 dBm
P
off CS
Optical noise power < -45 dBm
P
on SF
Optical output power > -15 dBm
P
off SF
Optical noise power < -50 dBm
Valid for 1mm plastic optical fibre
(POF)
t
GLITCH
Pulse width threshold ≤ 500 ns Max,pulse width without response
CS Receiver for command signal Agilent,Type HFBR-2528
Note 2
SF Transmitter for status feedback Agilent,Type HFBR-1528
Note 2
Note 1,AMP,www.amp.com
Note 2,Agilent Technologies,www.semiconductor.agilent.com
Note 3,Do not disconnect or connect fiber optic cables while light is on.
5SHX 26L4503
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1230-01 Feb,02 page 4 of 9
Thermal
T
jop
Operating junction temperature range 0…115 °C
T
stg
Storage temperature range -40…60 °C
T
amb
Ambient operational temperature range 0…50 °C
Thermal resistance junction to case
R
thJC
GCT Diode not dissipating ≤ 12 K/kW Double side cooled
R
thJC
Diode GCT not dissipating ≤ 23 K/kW
Thermal resistance case to heatsink
R
thCH
GCT Diode not dissipating ≤ 6 K/kW Double side cooled
R
thCH
Diode GCT not dissipating ≤ 6K/kW
5SHX 26L4503
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1230-01 Feb,02 page 5 of 9
GCT Part
1.5 2.0 2.5 3.0 3.5 4.0
V
T
[V]
0
500
1000
1500
2000
2500
3000
3500
I
T
[A]
T
j
= 115°C
0 500 1000 1500 2000 2500
0
1
2
3
4
5
6
7
8
9
I
TGQ
[A]
T
j
= 115°C
V
D
= 2700 V
E
off
[J]
Fig,1 GCT on-state characteristics,Fig,2 GCT turn-off energy per pulse vs.
turn-off current.
0
500
1000
1500
2000
2500
3000
3500
0 1000 2000 3000 4000
V
D
[V]
I
TGQ
[A]
T
j
= 0..115 °C
V
DM
≤ V
DRM
L
i
= 4.9 μH
C
CL
= 4.0 μF
L
CL
= 0.6 μH
R
s
= 0.63?
Fig,3 Max,repetitive GCT turn-off current.
5SHX 26L4503
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1230-01 Feb,02 page 6 of 9
Diode Part
3456789
V
F
[V]
0
500
1000
1500
2000
2500
3000
3500
I
F
[A]
Tj = 115°C
0 500 1000 1500 2000 2500
500
550
600
650
700
750
800
850
900
950
1000
T
j
= 115°C
di
F
/dt = 550 A/μs
V
D
= 2700 V
I
FQ
[A]
Irr [A]
Fig,4 Diode on-state characteristics,Fig,5 Diode reverse recovery current vs.
turn-off current.
0 500 1000 1500 2000 2500
I
FQ
[A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
E
rr
[J]
T
j
= 115°C
di
F
/dt = 550 A/μs
V
D
= 2700 V
0 1000 2000 3000 4000
V
D
[V]
0
500
1000
1500
2000
2500
3000
3500
I
FQ
[A]
T
j
= 0 - 115°C
di
F
/dt = 550 A/μs
V
DM ≤
V
DRM
Fig,6 Diode turn-off energy per pulse vs.
turn-off current.
Fig,7 Max,repetitive diode forward
current.
5SHX 26L4503
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1230-01 Feb,02 page 7 of 9
0 200 400 600 800
I
TGQ
[A]
0
10
20
30
40
50
60
70
80
90
100
110
120
P
Gin
[W]
duty cycle δ = 0.9
f
s
= 1000 Hz
f
s
= 750 Hz
f
s
= 250 Hz
Fig,8 Gate Unit power consumption.
7
.
4
5
2
1
3
1
5
0
225
451
226
2 2
,5°
2
7 4
0
134
122
120
16 x M3x12 (F-Schr.)
-+ -+
1
CSSF
X1
Fig,9 Device Outline Drawing.
5SHX 26L4503
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1230-01 Feb,02 page 8 of 9
RC-IGCT
Logic
Monitoring
Turn-
Off
Circuit
Turn-
On
Circuit
Gate
Cathode
Internal Supply (without galvanic isolation to power circuit)
Supply (20V
DC
)
X
1
CS Rx
Command Signal (Light)
Anode
Gate Unit RC-GCT
Fig,10 Block diagram.
5SHX 26L4503
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc,No,5SYA1230-01 Feb,02
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg,Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abbsem.com
1
CS
CS
I
T
V
DSP
V
DM
V
D
0.3 I
TGQ
0.8 I
TGQ
0.05 V
D
V
G
t
don
t
f
t
r
t
doff
I
T
I
TM
di/dt
0.9 V
D
0.1 V
D
V
D
Turn-on Turn-off
V
G
Fig,11 General current and voltage waveforms with IGCT-specific symbols.
L
CL
L
i
R
s
DUT
GCT - part
L
Load
DUT
Diode - part
C
CL
V
LC
Fig,12 Test circuit.
V
DRM
= 4500 V
I
TGQM
= 2200 A
I
TSM
= 18.8 kA
V
T0
=1.65V
r
T
=0.6
m?
V
DClink
= 2800 V
Reverse Conducting Integrated
Gate-Commutated Thyristor
5SHX 26L4503
Doc,No,5SYA1230-01 Feb,02
Direct fiber optic controll and status
Fast response (t
don
< 3 μs,t
doff
< 6 μs)
Precise timing
Patented free-floating silicon technology
High reliability
Very high EMI immunity
Cosmic radiation withstand rating
Blocking
V
DRM
Repetitive peak off-state voltage 4500 V V
GR
≥ 2V
I
DRM
Repetitive peak off-state current ≤ 50 mA V
D
= V
DRM
V
GR
≥ 2V
V
DClink
Permanent DC voltage for 100
FIT failure rate
2800 V
0 ≤ T
j
≤ 115 °C,Ambient cosmic
radiation at sea level in open air.
Mechanical data (see Fig,9)
min,42 kN
F
m
Mounting force
max,46 kN
D
p
Pole-piece diameter 85 mm ±0.1 mm
H Housing thickness 26 mm ±0.5 mm
m Weight IGCT 3.5 kg
D
s
Surface creepage distance ≥ 33 mm
D
a
Air strike distance ≥ 13 mm
l Length IGCT 451 mm +0/-0.5 mm
h Height IGCT 40 mm ±1.0 mm
w Width IGCT 213 mm +0/-0.5 mm
5SHX 26L4503
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1230-01 Feb,02 page 2 of 9
GCT Data
On-state (see Fig,1)
I
TAVM
Max,average on-state current 855 A Half sine wave,T
C
= 85 °C
I
TRMS
Max,RMS on-state current 1345 A
18.8 kA t
p
=10ms
I
TSM
Max,peak non-repetitive
surge current
33.6 kA t
p
=1ms
T
j
= 115 °C
After surge:
V
D
= V
R
= 0V
1.78x10
6
A
2
st
p
=10ms
I
2
t Limiting load integral
0.56x10
6
A
2
st
p
V
T
On-state voltage ≤ 3V I
T
= 2200 A
V
T0
Threshold voltage 1.65 V
r
T
Slope resistance 0.6 m?
I
T
= 400 - 3000 A
T
j
= 115 °C
Turn-on switching
f = 500 Hz T
j
= 115 °C
di/dt
crit
Max,rate of rise of on-state
current
650 A/μs
I
T
= 2200 A V
D
= 3200 V
t
don
Turn-on delay time ≤ 3μs V
D
= 2700 V T
j
= 115 °C
t
r
Rise time ≤ 1μs I
T
= 2200 A di/dt = 550 A/μs
t
on (min)
Min,on-time 10 μs R
S
=0.63? L
i
=4.9μH
E
on
Turn-on energy per pulse ≤ 0.85 J C
CL
=4μFL
CL
=0.6μH
Turn-off switching (see Fig,2,11,12)
V
DM
≤ V
DRM
T
j
= 115 °C
I
TGQM
Max,controllable turn-off current 2200 A
V
D
= 2700 V L
CL
≤ 0.6 μH
V
DM
≤ V
DRM
T
j
= 115 °C
I
TGQM2
Max,controllable turn-off current 1100 A
V
D
= 3200 V L
CL
≤ 0.6 μH
t
doff
Turn-off delay time ≤ 6μs V
D
= 2700 V V
DM
≤ V
DRM
t
f
Fall time ≤ 1μs T
j
= 115 °C R
s
=0.63?
t
off (min)
Min,off-time 10 μs I
TGQ
=I
TGQM
L
i
=4.9μH
E
off
Turn-off energy per pulse ≤ 8.7 J C
CL
=4μFL
CL
≤ 0.6 μH
5SHX 26L4503
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1230-01 Feb,02 page 3 of 9
Diode Data
On-state (see Fig,4)
I
FAVM
Max,average on-state current 315 A
I
FRMS
Max,RMS on-state current 500 A
Half sine wave,T
C
= 85 °C
16.9 kA t
p
=10msT
j
= 115 °C
I
FSM
Max,peak non-repetitive surge
current
42.8 kA t
p
= 1 ms After surge:
1.44×10
6
A
2
st
p
=10V
F
= V
R
= 0V
I
2
t Limiting load integral
0.91×10
6
A
2
st
p
ms
V
F
On-state voltage ≤ 7.05 V I
F
= 2200 A
V
F0
Threshold voltage 3.08 V T
j
= 115 °C
r
F
Slope resistance 1.8 m?
I
F
= 400 - 3000 A
Turn-off switching (see Fig,5,6,11,12)
I
F
= 2200 A T
j
= 115 °C
di/dt
crit
Max,rate of rise of on-state
current
650 A/μs
V
CL
= 3200 V
I
rr
Reverse recovery current ≤ 900 A V
CL
= 2700 V I
F
= 2200 A
E
rr
Turn-off energy ≤ 4 J di/dt = 550 A/μs T
j
= 115 °C
R
s
=0.63? L
i
=4.9μH
C
CL
=4μFL
CL
=0.6μH
Gate Unit
Power supply (see Fig,9 to 11)
V
GDC
Gate Unit voltage 20 ±0.5 V
DC
Without galvanic isolation to power
circuit.
P
Gin
Gate Unit power consumption ≤ 54 W f
S
= 500 Hz,I
TGQ AV
= 915 A,δ = 0.9
X1 Gate Unit power connector AMP 640389-4 MTA Friction Lock Header,right angle
(Note 1)
Optical control input/output
Note 3
(see Fig,9,10,11)
P
on CS
Optical input power > -21 dBm
P
off CS
Optical noise power < -45 dBm
P
on SF
Optical output power > -15 dBm
P
off SF
Optical noise power < -50 dBm
Valid for 1mm plastic optical fibre
(POF)
t
GLITCH
Pulse width threshold ≤ 500 ns Max,pulse width without response
CS Receiver for command signal Agilent,Type HFBR-2528
Note 2
SF Transmitter for status feedback Agilent,Type HFBR-1528
Note 2
Note 1,AMP,www.amp.com
Note 2,Agilent Technologies,www.semiconductor.agilent.com
Note 3,Do not disconnect or connect fiber optic cables while light is on.
5SHX 26L4503
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1230-01 Feb,02 page 4 of 9
Thermal
T
jop
Operating junction temperature range 0…115 °C
T
stg
Storage temperature range -40…60 °C
T
amb
Ambient operational temperature range 0…50 °C
Thermal resistance junction to case
R
thJC
GCT Diode not dissipating ≤ 12 K/kW Double side cooled
R
thJC
Diode GCT not dissipating ≤ 23 K/kW
Thermal resistance case to heatsink
R
thCH
GCT Diode not dissipating ≤ 6 K/kW Double side cooled
R
thCH
Diode GCT not dissipating ≤ 6K/kW
5SHX 26L4503
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1230-01 Feb,02 page 5 of 9
GCT Part
1.5 2.0 2.5 3.0 3.5 4.0
V
T
[V]
0
500
1000
1500
2000
2500
3000
3500
I
T
[A]
T
j
= 115°C
0 500 1000 1500 2000 2500
0
1
2
3
4
5
6
7
8
9
I
TGQ
[A]
T
j
= 115°C
V
D
= 2700 V
E
off
[J]
Fig,1 GCT on-state characteristics,Fig,2 GCT turn-off energy per pulse vs.
turn-off current.
0
500
1000
1500
2000
2500
3000
3500
0 1000 2000 3000 4000
V
D
[V]
I
TGQ
[A]
T
j
= 0..115 °C
V
DM
≤ V
DRM
L
i
= 4.9 μH
C
CL
= 4.0 μF
L
CL
= 0.6 μH
R
s
= 0.63?
Fig,3 Max,repetitive GCT turn-off current.
5SHX 26L4503
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1230-01 Feb,02 page 6 of 9
Diode Part
3456789
V
F
[V]
0
500
1000
1500
2000
2500
3000
3500
I
F
[A]
Tj = 115°C
0 500 1000 1500 2000 2500
500
550
600
650
700
750
800
850
900
950
1000
T
j
= 115°C
di
F
/dt = 550 A/μs
V
D
= 2700 V
I
FQ
[A]
Irr [A]
Fig,4 Diode on-state characteristics,Fig,5 Diode reverse recovery current vs.
turn-off current.
0 500 1000 1500 2000 2500
I
FQ
[A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
E
rr
[J]
T
j
= 115°C
di
F
/dt = 550 A/μs
V
D
= 2700 V
0 1000 2000 3000 4000
V
D
[V]
0
500
1000
1500
2000
2500
3000
3500
I
FQ
[A]
T
j
= 0 - 115°C
di
F
/dt = 550 A/μs
V
DM ≤
V
DRM
Fig,6 Diode turn-off energy per pulse vs.
turn-off current.
Fig,7 Max,repetitive diode forward
current.
5SHX 26L4503
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1230-01 Feb,02 page 7 of 9
0 200 400 600 800
I
TGQ
[A]
0
10
20
30
40
50
60
70
80
90
100
110
120
P
Gin
[W]
duty cycle δ = 0.9
f
s
= 1000 Hz
f
s
= 750 Hz
f
s
= 250 Hz
Fig,8 Gate Unit power consumption.
7
.
4
5
2
1
3
1
5
0
225
451
226
2 2
,5°
2
7 4
0
134
122
120
16 x M3x12 (F-Schr.)
-+ -+
1
CSSF
X1
Fig,9 Device Outline Drawing.
5SHX 26L4503
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1230-01 Feb,02 page 8 of 9
RC-IGCT
Logic
Monitoring
Turn-
Off
Circuit
Turn-
On
Circuit
Gate
Cathode
Internal Supply (without galvanic isolation to power circuit)
Supply (20V
DC
)
X
1
CS Rx
Command Signal (Light)
Anode
Gate Unit RC-GCT
Fig,10 Block diagram.
5SHX 26L4503
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc,No,5SYA1230-01 Feb,02
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg,Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abbsem.com
1
CS
CS
I
T
V
DSP
V
DM
V
D
0.3 I
TGQ
0.8 I
TGQ
0.05 V
D
V
G
t
don
t
f
t
r
t
doff
I
T
I
TM
di/dt
0.9 V
D
0.1 V
D
V
D
Turn-on Turn-off
V
G
Fig,11 General current and voltage waveforms with IGCT-specific symbols.
L
CL
L
i
R
s
DUT
GCT - part
L
Load
DUT
Diode - part
C
CL
V
LC
Fig,12 Test circuit.
