1/13
www.dynexsemi.com
DK13..FW
FEATURES
a73 Low Switching Losses At High Frequency.
a73 Fully Characterised For Operation Up To 20kHz.
APPLICATIONS
a73 High Power Inverters And Choppers.
a73 UPS.
a73 AC Motor Drives.
a73 Induction Heating.
a73 Cycloconverters.
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering,select the required part number shown in the
Voltage Ratings selection table,then:-
Add K to type number for 1/2" 20 UNF thread,e.g,DK13 06FWK
or
Add M to type number for M12 thread,e.g,DK13 06FM.
Note,Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
DRM
800V
I
T(RMS)
110A
I
TSM
1200A
dVdt 200V/μs
dI/dt 200A/μs
t
q
10μs
DK13..FW
Fast Switching Thyristor
Replaces July 2001 version,DS4267-4.0 DS4267-4.1 July 2002
Outline type code,TO94
See Package Details for further information.
Fig,1 Package outline
DK13 08FW K or M
DK13 06FW K or M
Conditions
V
RSM
= V
RRM
+ 100V
I
DRM
= I
RRM
= 15mA
at V
RRM
or V
DRM
& T
vj
Type Number Repetitive Peak
Voltages
V
DRM
V
RRM
V
800
600
2/13
www.dynexsemi.com
DK13..FW
SURGE RATINGS
Conditions
t
p
= 10ms half sine; T
case
= 125
o
C
V
R
= 0% V
RRM
- 1/4 sine
Max,Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
tI
2
t for fusing 7.2 x 10
3
A
2
s
1.2 kA
THERMAL AND MECHANICAL DATA
Conditions Min,Max,UnitsSymbol Parameter
- 0.24
o
C/WThermal resistance - junction to caseR
th(j-c)
Mounting torque 15.0Nm
with mounting compound
0.08-
o
C/WThermal resistance - case to heatsinkR
th(c-h)
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
- Mounting torque 12.0 15.0 Nm
-40 150
o
C
-
On-state (conducting) - 125
o
C
dc
CURRENT RATINGS
Symbol Parameter Conditions UnitsMax.
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
Half wave resistive load,T
case
= 80
o
C70A
T
case
= 80
o
C 110 A
MEASUREMENT OF RECOVERED CHARGE - Q
RA1
0.5x I
RR
I
RR
Q
RA1
t
p
= 1ms
I
TM
dI
R
/dt
Measurement of Q
RA1
,Q
RA1
= I
RR
x t
RR
2
3/13
www.dynexsemi.com
DK13..FW
DYNAMIC CHARACTERISTICS
V
TM
ParameterSymbol Conditions
Maximum on-state voltage At 300A peak,T
case
= 25
o
C
I
RRM
/I
DRM
Peak reverse and off-state current At V
RRM
/V
DRM
,T
case
= 125
o
C
Gate source 20V,20?
t
r
< 0.5μs,T
j
= 125?C
dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V
DRM
T
j
= 125
o
C,Gate open circuit
Min,Max,Units
- 2.35 V
-15mA
- 200 V/μs
Repetitive 50Hz - 500 A/μs
Non-repetitive - 800 A/μs
Rate of rise of on-state currentdI/dt
V
T(TO)
Threshold voltage At T
vj
= 125
o
C
r
T
On-state slope resistance At T
vj
= 125
o
C
1.65-V
- 3.5 m?
Delay timet
gd
-3μs
Total turn-on timet
(ON)TOT
- 1.5 μs
T
j
= 25?C,I
T
= 50A,
V
D
= 300V,I
G
= 1A,
dI/dt =50A/μs,dI
G
/dt = 1A/μs
*Typical value.
I
H
Holding current T
j
= 25
o
C,I
TM
= 1A,V
D
= 12V 60* - mA
T
j
= 125?C,I
T
= 100A,V
R
= 50V,
dV/dt = 200V/μs (Linear to 60% V
DRM
),
dI
R
/dt = 30A/μs,Gate open circuit
Turn-off timet
q
10- μst
q
code,W
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 12V,T
case
= 25
o
C,R
L
= 6?
ConditionsParameterSymbol
V
GT
Gate trigger voltage V
DRM
= 12V,T
case
= 25
o
C,R
L
= 6?
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage At V
DRM
T
case
= 125
o
C,R
L
= 1k?
- 3.0 V
- 200 mA
- 0.2 V
Typ,Max,Units
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current Anode positive with respect to cathode
P
GM
Peak gate power
P
G(AV)
Mean gate power
- 5.0 V
-4A
-16W
- 3.0 W
4/13
www.dynexsemi.com
DK13..FW
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Gate characteristics
Fig.4 Typical recovered charge (for a device rated V
DRM
= 600V,t
q
= 10μs)
5/13
www.dynexsemi.com
DK13..FW
Fig.5 Transient thermal impedance - junction to case
Fig.6 Non-repetitive sub-cycle surge on-state current and I
2
t rating
6/13
www.dynexsemi.com
DK13..FW
NOTES:
1,V
D
≤ 600V.
2,V
R
≤ 10V.
3,R.C Snubber,C = 0.22μF,R = 4.7?
NOTES:
1,V
D
≤ 600V.
2,V
R
≤ 10V.
3,R.C Snubber,C = 0.22μF,R = 4.7?
Fig.7 Energy per pulse for sinusoidal pulses
Fig.8 Maximum allowable peak on-state current vs pulse width for T
case
= 65?C
7/13
www.dynexsemi.com
DK13..FW
NOTES:
1,V
D
≤ 600V.
2,V
R
≤ 10V.
3,R.C Snubber,C = 0.22μF,R = 4.7?
NOTES:
1,dI/dt = 25A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
Fig.9 Maximum allowable peak on-state current vs pulse width for T
case
= 90?C
Fig.10 Energy per pulse for trapezoidal pulses
8/13
www.dynexsemi.com
DK13..FW
NOTES:
1,dI/dt = 25A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
NOTES:
1,dI/dt = 25A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
Fig.11 Maximum allowable peak on-state current vs pulse width for T
case
= 65?C
Fig.12 Maximum allowable peak on-state current vs pulse width for T
case
= 90?C
9/13
www.dynexsemi.com
DK13..FW
NOTES:
1,dI/dt = 50A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
NOTES:
1,dI/dt = 50A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
Fig.13 Energy per pulse for trapezoidal pulses
Fig.14 Maximum allowable peak on-state current vs pulse width for T
case
= 65?C
10/13
www.dynexsemi.com
DK13..FW
NOTES:
1,dI/dt = 50A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
NOTES:
1,dI/dt = 100A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
Fig.15 Maximum allowable peak on-state current vs pulse width for T
case
= 65?C
Fig.16 Energy per pulse for trapezoidal pulses
11/13
www.dynexsemi.com
DK13..FW
NOTES:
1,dI/dt = 100A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
NOTES:
1,dI/dt = 100A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
Fig.17 Maximum allowable peak on-state current vs pulse width for T
case
= 65?C
Fig.18 Maximum allowable peak on-state current vs pulse width for T
case
= 90?C
12/13
www.dynexsemi.com
DK13..FW
PACKAGE DETAILS
For further package information,please contact your nearest Customer Service Centre,All dimensions in mm,unless stated otherwise.
DO NOT SCALE.
160 ±
10
8 min
8 min
8.4 ± 0.3
210 ±
10
4
15 max
30 max
Hex,27AF
M = M12
K = 1/2" 20 UNF
K = 20.6 ± 0.6
M = 18.0 ± 0.5
Nominal weight,120g
Mounting torque,15Nm ±10%
Gate lead colour,White
Cathode lead colour,Red
Package outine type code,TO94
www.dynexsemi.com
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor,and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors,Data with respect to air natural,forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps,heatsinks and assemblies,please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel,+44 (0)1522 502753 / 502901,Fax,+44 (0)1522 500020
SALES OFFICES
Benelux,Italy & Switzerland,Tel,+33 (0)1 64 66 42 17,Fax,+33 (0)1 64 66 42 19.
France,Tel,+33 (0)2 47 55 75 52,Fax,+33 (0)2 47 55 75 59.
Germany,Northern Europe,Spain & Rest Of World,Tel,+44 (0)1522 502753 / 502901.
Fax,+44 (0)1522 500020
North America,Tel,(440) 259-2060,Fax,(440) 259-2059,Tel,(949) 733-3005,Fax,(949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE,PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road,Lincoln.
Lincolnshire,LN6 3LF,United Kingdom.
Tel,+44-(0)1522-500500
Fax,+44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used,applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned,No warranty or guarantee express or implied is made regarding the capability,performance or suitability of any product or service,The Company
reserves the right to alter without prior notice the specification,design or price of any product or service,Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment,It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded,These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user,All products and materials are sold and services provided subject to the Company's conditions of sale,which are available on request.
All brand names and product names used in this publication are trademarks,registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail,power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page,to indicate product status,The annotations are as follows:-
Target Information,This is the most tentative form of information and represents a very preliminary specification,No actual design work on the product has been started.
Preliminary Information,The product is in design and development,The datasheet represents the product as it is understood but details may change.
Advance Information,The product design is complete and final characterisation for volume production is well in hand.
No Annotation,The product parameters are fixed and the product is available to datasheet specification.
www.dynexsemi.com
DK13..FW
FEATURES
a73 Low Switching Losses At High Frequency.
a73 Fully Characterised For Operation Up To 20kHz.
APPLICATIONS
a73 High Power Inverters And Choppers.
a73 UPS.
a73 AC Motor Drives.
a73 Induction Heating.
a73 Cycloconverters.
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering,select the required part number shown in the
Voltage Ratings selection table,then:-
Add K to type number for 1/2" 20 UNF thread,e.g,DK13 06FWK
or
Add M to type number for M12 thread,e.g,DK13 06FM.
Note,Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
DRM
800V
I
T(RMS)
110A
I
TSM
1200A
dVdt 200V/μs
dI/dt 200A/μs
t
q
10μs
DK13..FW
Fast Switching Thyristor
Replaces July 2001 version,DS4267-4.0 DS4267-4.1 July 2002
Outline type code,TO94
See Package Details for further information.
Fig,1 Package outline
DK13 08FW K or M
DK13 06FW K or M
Conditions
V
RSM
= V
RRM
+ 100V
I
DRM
= I
RRM
= 15mA
at V
RRM
or V
DRM
& T
vj
Type Number Repetitive Peak
Voltages
V
DRM
V
RRM
V
800
600
2/13
www.dynexsemi.com
DK13..FW
SURGE RATINGS
Conditions
t
p
= 10ms half sine; T
case
= 125
o
C
V
R
= 0% V
RRM
- 1/4 sine
Max,Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
tI
2
t for fusing 7.2 x 10
3
A
2
s
1.2 kA
THERMAL AND MECHANICAL DATA
Conditions Min,Max,UnitsSymbol Parameter
- 0.24
o
C/WThermal resistance - junction to caseR
th(j-c)
Mounting torque 15.0Nm
with mounting compound
0.08-
o
C/WThermal resistance - case to heatsinkR
th(c-h)
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
- Mounting torque 12.0 15.0 Nm
-40 150
o
C
-
On-state (conducting) - 125
o
C
dc
CURRENT RATINGS
Symbol Parameter Conditions UnitsMax.
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
Half wave resistive load,T
case
= 80
o
C70A
T
case
= 80
o
C 110 A
MEASUREMENT OF RECOVERED CHARGE - Q
RA1
0.5x I
RR
I
RR
Q
RA1
t
p
= 1ms
I
TM
dI
R
/dt
Measurement of Q
RA1
,Q
RA1
= I
RR
x t
RR
2
3/13
www.dynexsemi.com
DK13..FW
DYNAMIC CHARACTERISTICS
V
TM
ParameterSymbol Conditions
Maximum on-state voltage At 300A peak,T
case
= 25
o
C
I
RRM
/I
DRM
Peak reverse and off-state current At V
RRM
/V
DRM
,T
case
= 125
o
C
Gate source 20V,20?
t
r
< 0.5μs,T
j
= 125?C
dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V
DRM
T
j
= 125
o
C,Gate open circuit
Min,Max,Units
- 2.35 V
-15mA
- 200 V/μs
Repetitive 50Hz - 500 A/μs
Non-repetitive - 800 A/μs
Rate of rise of on-state currentdI/dt
V
T(TO)
Threshold voltage At T
vj
= 125
o
C
r
T
On-state slope resistance At T
vj
= 125
o
C
1.65-V
- 3.5 m?
Delay timet
gd
-3μs
Total turn-on timet
(ON)TOT
- 1.5 μs
T
j
= 25?C,I
T
= 50A,
V
D
= 300V,I
G
= 1A,
dI/dt =50A/μs,dI
G
/dt = 1A/μs
*Typical value.
I
H
Holding current T
j
= 25
o
C,I
TM
= 1A,V
D
= 12V 60* - mA
T
j
= 125?C,I
T
= 100A,V
R
= 50V,
dV/dt = 200V/μs (Linear to 60% V
DRM
),
dI
R
/dt = 30A/μs,Gate open circuit
Turn-off timet
q
10- μst
q
code,W
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 12V,T
case
= 25
o
C,R
L
= 6?
ConditionsParameterSymbol
V
GT
Gate trigger voltage V
DRM
= 12V,T
case
= 25
o
C,R
L
= 6?
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage At V
DRM
T
case
= 125
o
C,R
L
= 1k?
- 3.0 V
- 200 mA
- 0.2 V
Typ,Max,Units
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current Anode positive with respect to cathode
P
GM
Peak gate power
P
G(AV)
Mean gate power
- 5.0 V
-4A
-16W
- 3.0 W
4/13
www.dynexsemi.com
DK13..FW
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Gate characteristics
Fig.4 Typical recovered charge (for a device rated V
DRM
= 600V,t
q
= 10μs)
5/13
www.dynexsemi.com
DK13..FW
Fig.5 Transient thermal impedance - junction to case
Fig.6 Non-repetitive sub-cycle surge on-state current and I
2
t rating
6/13
www.dynexsemi.com
DK13..FW
NOTES:
1,V
D
≤ 600V.
2,V
R
≤ 10V.
3,R.C Snubber,C = 0.22μF,R = 4.7?
NOTES:
1,V
D
≤ 600V.
2,V
R
≤ 10V.
3,R.C Snubber,C = 0.22μF,R = 4.7?
Fig.7 Energy per pulse for sinusoidal pulses
Fig.8 Maximum allowable peak on-state current vs pulse width for T
case
= 65?C
7/13
www.dynexsemi.com
DK13..FW
NOTES:
1,V
D
≤ 600V.
2,V
R
≤ 10V.
3,R.C Snubber,C = 0.22μF,R = 4.7?
NOTES:
1,dI/dt = 25A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
Fig.9 Maximum allowable peak on-state current vs pulse width for T
case
= 90?C
Fig.10 Energy per pulse for trapezoidal pulses
8/13
www.dynexsemi.com
DK13..FW
NOTES:
1,dI/dt = 25A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
NOTES:
1,dI/dt = 25A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
Fig.11 Maximum allowable peak on-state current vs pulse width for T
case
= 65?C
Fig.12 Maximum allowable peak on-state current vs pulse width for T
case
= 90?C
9/13
www.dynexsemi.com
DK13..FW
NOTES:
1,dI/dt = 50A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
NOTES:
1,dI/dt = 50A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
Fig.13 Energy per pulse for trapezoidal pulses
Fig.14 Maximum allowable peak on-state current vs pulse width for T
case
= 65?C
10/13
www.dynexsemi.com
DK13..FW
NOTES:
1,dI/dt = 50A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
NOTES:
1,dI/dt = 100A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
Fig.15 Maximum allowable peak on-state current vs pulse width for T
case
= 65?C
Fig.16 Energy per pulse for trapezoidal pulses
11/13
www.dynexsemi.com
DK13..FW
NOTES:
1,dI/dt = 100A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
NOTES:
1,dI/dt = 100A/μs
2,V
D
≤ 600V.
3,V
R
≤ 10V.
4,R.C Snubber,C = 0.22μF,R = 4.7?
Fig.17 Maximum allowable peak on-state current vs pulse width for T
case
= 65?C
Fig.18 Maximum allowable peak on-state current vs pulse width for T
case
= 90?C
12/13
www.dynexsemi.com
DK13..FW
PACKAGE DETAILS
For further package information,please contact your nearest Customer Service Centre,All dimensions in mm,unless stated otherwise.
DO NOT SCALE.
160 ±
10
8 min
8 min
8.4 ± 0.3
210 ±
10
4
15 max
30 max
Hex,27AF
M = M12
K = 1/2" 20 UNF
K = 20.6 ± 0.6
M = 18.0 ± 0.5
Nominal weight,120g
Mounting torque,15Nm ±10%
Gate lead colour,White
Cathode lead colour,Red
Package outine type code,TO94
www.dynexsemi.com
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor,and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors,Data with respect to air natural,forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps,heatsinks and assemblies,please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel,+44 (0)1522 502753 / 502901,Fax,+44 (0)1522 500020
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These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE,PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road,Lincoln.
Lincolnshire,LN6 3LF,United Kingdom.
Tel,+44-(0)1522-500500
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This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used,applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned,No warranty or guarantee express or implied is made regarding the capability,performance or suitability of any product or service,The Company
reserves the right to alter without prior notice the specification,design or price of any product or service,Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment,It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded,These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user,All products and materials are sold and services provided subject to the Company's conditions of sale,which are available on request.
All brand names and product names used in this publication are trademarks,registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail,power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page,to indicate product status,The annotations are as follows:-
Target Information,This is the most tentative form of information and represents a very preliminary specification,No actual design work on the product has been started.
Preliminary Information,The product is in design and development,The datasheet represents the product as it is understood but details may change.
Advance Information,The product design is complete and final characterisation for volume production is well in hand.
No Annotation,The product parameters are fixed and the product is available to datasheet specification.
