Dual-gate trench MOS-
controlled thyristor for high
power switching
Technology Reference
CS26
Contact
Lanny Feder
312-996-5496 voice
312-413-0238 fax
Lfeder@uic.edu
Key Word(s)
Trench
MOS-controlled thyristor
high power
semiconductor
switch
traction
utility
motor drive
Stage of Development
Numerical simulations have
been conducted,
A prototype is in
development,
Description
The invention describes a high power
semiconductor device with insulated gate
controlled turn-on and turn-off,In the on state,
the device has a very low conduction loss and
operates as a thyristor,
Field of Application
The invention can be utilized in high power
electronic applications requiring,1) very low
conduction losses; 2) high switching speeds; and
3) controllable turn-on and turn-off,Possible
applications include motor drives,electrical
utilities and traction,
Advantages
1,Improved channel mobility,Trench design
produces no lateral resistance,
2,Improved dV/dt capability,Superior
immunity,
3,Higher turn-off current density,Due to
reduction of the lateral resistance,
4,High reliability,Reduced electric field
stress on the gate,
5,Cost effectiveness,The design has a
similar cost ratio with current devices in
production,
