DCR1473SY / DCR1473SV
1/9
www.dynexsemi.com
Replaces November 2002 version,DS4652-5.1 DS4652-6.0 October 2003
DCR1473SY / DCR1473SV
Phase Control Thyristor
KEY PARAMETERS
V
DRM
1200V
I
T(AV)
4135A
I
TSM
64000A
dVdt* 1000V/μs
dI/dt 500A/μs
*Higher dV/dt selections available
ORDERING INFORMATION
When ordering select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1473SY12 for a 1200V 'Y' outline variant
or
DCR1473SV12 for a 1200V 'V' outline variant
If a lower voltage grade is required,then use V
DRM
/100 for the
grade required e.g.:
DCR1473SY10 for a 1000V 'Y' outline variant etc.
Note,Please use the complete part number when ordering and quote
this number in any future correspondance relating to your order.
VOLTAGE RATINGS
DCR1473SY12
or
DCR1473SV12
Conditions
T
vj
= 0? to 125?C.
I
DRM
= I
RRM
= 250mA.
V
DRM
,V
RRM
= 10ms 1/2 sine.
V
DSM
& V
RSM
= V
DRM
& V
RRM
+ 100V
respectively.
Lower voltage grades available.
Part Number Repetitive Peak Voltages
V
DRM
V
RRM
V
1200
1200
PACKAGE OUTLINE
See Package Details for further information.
Fig,1 Package outline
Outline type code,Y Outline type code,V
DCR1473SY / DCR1473SV
2/9
www.dynexsemi.com
Symbol Parameter Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
UnitsMax.
Half wave resistive load 3190 A
- 5010 A
- 3950 A
Half wave resistive load 1966 A
- 3090 A
- 2410 A
Symbol Parameter Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
UnitsMax.
Half wave resistive load 4135 A
- 6495 A
- 5700 A
Half wave resistive load 2605 A
- 4090 A
- 3290 A
CURRENT RATING
T
case
= 80?C unless stated otherwise.
CURRENT RATING
T
case
= 60?C unless stated otherwise.
DCR1473SY / DCR1473SV
3/9
www.dynexsemi.com
SURGE RATINGS
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max,Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
tI
2
t for fusing
I
TSM
Surge (non-repetitive) on-state current
I
2
t I
2
t for fusing 20.48 x 10
6
A
2
s
64.0 kA
13.1x 10
6
A
2
s
51.0 kA
THERMAL AND MECHANICAL DATA
dc
Conditions Min,Max,Units
o
C/W- 0.019Anode dc
Clamping force 43.0kN
with mounting compound
Thermal resistance - case to heatsinkR
th(c-h)
0.002Double side -
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to caseR
th(j-c)
Single side cooled
Symbol Parameter
Clamping force 38.0 47.0 kN
-55 125
o
C
-
On-state (conducting) - 135
o
C
- 0.004
o
C/W
o
C/W
Cathode dc --
o
C/W
Double side cooled - 0.0095
o
C/W
DCR1473SY / DCR1473SV
4/9
www.dynexsemi.com
DYNAMIC CHARACTERISTICS
ParameterSymbol Conditions
I
RRM
/I
DRM
Peak reverse and off-state current At V
RRM
/V
DRM
,T
case
= 125
o
C
From 67% V
DRM
to 1000A
Gate source 20V,10?
t
r
= 0.5μs to 1A,T
j
= 125
o
C
dV/dt Maximum linear rate of rise of off-state voltage To 67% V
DRM
T
j
= 125
o
C,gate open circuit
Max,Units
250 mA
1000 V/μs
Repetitive 50Hz 250 A/μs
Non-repetitive 500 A/μs
Rate of rise of on-state currentdI/dt
V
T(TO)
Threshold voltage At T
vj
= 125
o
C
r
T
On-state slope resistance At T
vj
= 125
o
C
t
gd
Delay time
0.824 V
0.066 m?
2.0 μs
V
D
= 67% V
DRM
,Gate source 30V,15?
t
r
= 0.5μs,T
j
= 25
o
C
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 5V,T
case
= 25
o
C
ConditionsParameterSymbol
V
GT
Gate trigger voltage V
DRM
= 5V,T
case
= 25
o
C
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage At V
DRM
T
case
= 125
o
C
V
FGM
Peak forward gate voltage Anode positive with respect to cathode
V
FGN
Peak forward gate voltage Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current Anode positive with respect to cathode
P
G(PK)
Peak gate power See Gate Characteristics curve/table
P
G(AV)
Mean gate power
4.0 V
400 mA
0.25 V
30 V
0.25 V
5V
30 A
150 W
10 W
Max,Units
DCR1473SY / DCR1473SV
5/9
www.dynexsemi.com
0
1000
2000
3000
4000
0 1000 2000 3000 4000
Mean on-state current,I
T(AV)
- (A)
Mean power dissipation - (W)
dc
1/2 wave
3 phase
6 phase
CURVES
Fig,2 Maximum (limit) on-state characteristics Fig,3 Power dissipation curves
Fig,4 Gate characteristics
0.5 1.0 1.5
Instantaneous on-state voltage V
T
- (V)
0
2000
4000
6000
8000
10000
Instantaneous on-state current I
T
- (A)
Measured under pulse conditions
T
j
= 25?C
T
j
= 125?C
1010.10.010.001
Gate trigger current I
GT
- (A)
100
10
1
0.1
Gate trigger voltage V
GT
- (V)
100W
50W
20W
10W
5W
2W
T
j
= 125?C
T
j
= -40?C
T
j
= 25?C
Upper limit 99%
V
FGM
I
FGM
Lower
limit 1%
Pulse width
μs
100
200
500
1ms
10ms
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
Pulse frequency Hz
Table gives pulse power P
G(PK)
in Watts
DCR1473SY / DCR1473SV
6/9
www.dynexsemi.com
Fig,5 Maximum (limit) transient thermal impedance - junction to case
Fig,6 Surge (non-repetitive) on-state current vs time (with 50% V
RRM
at T
case
= 125?C)
0.001 0.01 0.1 1.0 10 100
Time - (s)
0.1000
0.0100
0.0010
0.0001
Thermal impedance - (
C/W)
Single side cooled
Double side cooled
Conduction
d.c.
Halfwave
3 phase 120?
6 phase 60?
Effective Thermal Resistance
Junction to case -?C/W
Double
Sided
0.0095
0.0105
0.0112
0.0139
Single
Sided
0.0190
0.0200
0.0207
0.0234
80
60
40
20
0
Peak half sine wave on-state current - (kA)
1101234550
ms Cycles at 50Hz
Duration
0
4.0
I
2
t value - (A
2
s x 10
6
)
I
2
t
I
2
t =?
2
x t
2
10.0
100
10 20 30
2.0
6.0
8.0
14.0
12.0
120
DCR1473SY / DCR1473SV
7/9
www.dynexsemi.com
PACKAGE DETAILS
For further package information,please contact Customer Services,All dimensions in mm,unless stated otherwise,DO NOT SCALE.
2 holes?3.6 x 2.0 deep (In both electrodes)
73 nom
Cathode
Gate
Anode
27.0 25.4
Cathode tab
73 nom
112.5 max
1.5
Nominal weight,1100g
Clamping force,50kN ±10%
Lead length,420mm
Lead terminal connector,M4 ring
Package outline type code,V
Fig.7 Package details
DCR1473SY / DCR1473SV
8/9
www.dynexsemi.com
PACKAGE DETAILS
For further package information,please contact Customer Services,All dimensions in mm,unless stated otherwise,DO NOT SCALE.
2 holes?3.6 x 2.0 deep (In both electrodes)
73 nom
Cathode
Gate
Anode
27.0 25.4
Cathode tab
73 nom
112.5 max
1.5
Nominal weight,1100g
Clamping force,50kN ±10%
Lead length,420mm
Lead terminal connector,M4 ring
Package outline type code,V
Fig.8 Package details
www.dynexsemi.com
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor,and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors,Data with respect to air natural,forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps,heatsinks and assemblies,please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel,+44 (0)1522 502753 / 502901,Fax,+44 (0)1522 500020
SALES OFFICES
Benelux,Italy & Switzerland,Tel,+33 (0)1 64 66 42 17,Fax,+33 (0)1 64 66 42 19.
France,Tel,+33 (0)2 47 55 75 53,Fax,+33 (0)2 47 55 75 59.
Germany,Northern Europe,Spain & Rest Of World,Tel,+44 (0)1522 502753 / 502901.
Fax,+44 (0)1522 500020
North America,Tel,(440) 259-2060,Fax,(440) 259-2059,Tel,(949) 733-3005,Fax,(949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE,PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road,Lincoln.
Lincolnshire,LN6 3LF,United Kingdom.
Tel,+44-(0)1522-500500
Fax,+44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used,applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned,No warranty or guarantee express or implied is made regarding the capability,performance or suitability of any product or service,The Company
reserves the right to alter without prior notice the specification,design or price of any product or service,Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment,It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded,These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user,All products and materials are sold and services provided subject to the Company's conditions of sale,which are available on request.
All brand names and product names used in this publication are trademarks,registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail,power_solutions@dynexsemi.com
1/9
www.dynexsemi.com
Replaces November 2002 version,DS4652-5.1 DS4652-6.0 October 2003
DCR1473SY / DCR1473SV
Phase Control Thyristor
KEY PARAMETERS
V
DRM
1200V
I
T(AV)
4135A
I
TSM
64000A
dVdt* 1000V/μs
dI/dt 500A/μs
*Higher dV/dt selections available
ORDERING INFORMATION
When ordering select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1473SY12 for a 1200V 'Y' outline variant
or
DCR1473SV12 for a 1200V 'V' outline variant
If a lower voltage grade is required,then use V
DRM
/100 for the
grade required e.g.:
DCR1473SY10 for a 1000V 'Y' outline variant etc.
Note,Please use the complete part number when ordering and quote
this number in any future correspondance relating to your order.
VOLTAGE RATINGS
DCR1473SY12
or
DCR1473SV12
Conditions
T
vj
= 0? to 125?C.
I
DRM
= I
RRM
= 250mA.
V
DRM
,V
RRM
= 10ms 1/2 sine.
V
DSM
& V
RSM
= V
DRM
& V
RRM
+ 100V
respectively.
Lower voltage grades available.
Part Number Repetitive Peak Voltages
V
DRM
V
RRM
V
1200
1200
PACKAGE OUTLINE
See Package Details for further information.
Fig,1 Package outline
Outline type code,Y Outline type code,V
DCR1473SY / DCR1473SV
2/9
www.dynexsemi.com
Symbol Parameter Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
UnitsMax.
Half wave resistive load 3190 A
- 5010 A
- 3950 A
Half wave resistive load 1966 A
- 3090 A
- 2410 A
Symbol Parameter Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
UnitsMax.
Half wave resistive load 4135 A
- 6495 A
- 5700 A
Half wave resistive load 2605 A
- 4090 A
- 3290 A
CURRENT RATING
T
case
= 80?C unless stated otherwise.
CURRENT RATING
T
case
= 60?C unless stated otherwise.
DCR1473SY / DCR1473SV
3/9
www.dynexsemi.com
SURGE RATINGS
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max,Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
tI
2
t for fusing
I
TSM
Surge (non-repetitive) on-state current
I
2
t I
2
t for fusing 20.48 x 10
6
A
2
s
64.0 kA
13.1x 10
6
A
2
s
51.0 kA
THERMAL AND MECHANICAL DATA
dc
Conditions Min,Max,Units
o
C/W- 0.019Anode dc
Clamping force 43.0kN
with mounting compound
Thermal resistance - case to heatsinkR
th(c-h)
0.002Double side -
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to caseR
th(j-c)
Single side cooled
Symbol Parameter
Clamping force 38.0 47.0 kN
-55 125
o
C
-
On-state (conducting) - 135
o
C
- 0.004
o
C/W
o
C/W
Cathode dc --
o
C/W
Double side cooled - 0.0095
o
C/W
DCR1473SY / DCR1473SV
4/9
www.dynexsemi.com
DYNAMIC CHARACTERISTICS
ParameterSymbol Conditions
I
RRM
/I
DRM
Peak reverse and off-state current At V
RRM
/V
DRM
,T
case
= 125
o
C
From 67% V
DRM
to 1000A
Gate source 20V,10?
t
r
= 0.5μs to 1A,T
j
= 125
o
C
dV/dt Maximum linear rate of rise of off-state voltage To 67% V
DRM
T
j
= 125
o
C,gate open circuit
Max,Units
250 mA
1000 V/μs
Repetitive 50Hz 250 A/μs
Non-repetitive 500 A/μs
Rate of rise of on-state currentdI/dt
V
T(TO)
Threshold voltage At T
vj
= 125
o
C
r
T
On-state slope resistance At T
vj
= 125
o
C
t
gd
Delay time
0.824 V
0.066 m?
2.0 μs
V
D
= 67% V
DRM
,Gate source 30V,15?
t
r
= 0.5μs,T
j
= 25
o
C
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 5V,T
case
= 25
o
C
ConditionsParameterSymbol
V
GT
Gate trigger voltage V
DRM
= 5V,T
case
= 25
o
C
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage At V
DRM
T
case
= 125
o
C
V
FGM
Peak forward gate voltage Anode positive with respect to cathode
V
FGN
Peak forward gate voltage Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current Anode positive with respect to cathode
P
G(PK)
Peak gate power See Gate Characteristics curve/table
P
G(AV)
Mean gate power
4.0 V
400 mA
0.25 V
30 V
0.25 V
5V
30 A
150 W
10 W
Max,Units
DCR1473SY / DCR1473SV
5/9
www.dynexsemi.com
0
1000
2000
3000
4000
0 1000 2000 3000 4000
Mean on-state current,I
T(AV)
- (A)
Mean power dissipation - (W)
dc
1/2 wave
3 phase
6 phase
CURVES
Fig,2 Maximum (limit) on-state characteristics Fig,3 Power dissipation curves
Fig,4 Gate characteristics
0.5 1.0 1.5
Instantaneous on-state voltage V
T
- (V)
0
2000
4000
6000
8000
10000
Instantaneous on-state current I
T
- (A)
Measured under pulse conditions
T
j
= 25?C
T
j
= 125?C
1010.10.010.001
Gate trigger current I
GT
- (A)
100
10
1
0.1
Gate trigger voltage V
GT
- (V)
100W
50W
20W
10W
5W
2W
T
j
= 125?C
T
j
= -40?C
T
j
= 25?C
Upper limit 99%
V
FGM
I
FGM
Lower
limit 1%
Pulse width
μs
100
200
500
1ms
10ms
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
Pulse frequency Hz
Table gives pulse power P
G(PK)
in Watts
DCR1473SY / DCR1473SV
6/9
www.dynexsemi.com
Fig,5 Maximum (limit) transient thermal impedance - junction to case
Fig,6 Surge (non-repetitive) on-state current vs time (with 50% V
RRM
at T
case
= 125?C)
0.001 0.01 0.1 1.0 10 100
Time - (s)
0.1000
0.0100
0.0010
0.0001
Thermal impedance - (
C/W)
Single side cooled
Double side cooled
Conduction
d.c.
Halfwave
3 phase 120?
6 phase 60?
Effective Thermal Resistance
Junction to case -?C/W
Double
Sided
0.0095
0.0105
0.0112
0.0139
Single
Sided
0.0190
0.0200
0.0207
0.0234
80
60
40
20
0
Peak half sine wave on-state current - (kA)
1101234550
ms Cycles at 50Hz
Duration
0
4.0
I
2
t value - (A
2
s x 10
6
)
I
2
t
I
2
t =?
2
x t
2
10.0
100
10 20 30
2.0
6.0
8.0
14.0
12.0
120
DCR1473SY / DCR1473SV
7/9
www.dynexsemi.com
PACKAGE DETAILS
For further package information,please contact Customer Services,All dimensions in mm,unless stated otherwise,DO NOT SCALE.
2 holes?3.6 x 2.0 deep (In both electrodes)
73 nom
Cathode
Gate
Anode
27.0 25.4
Cathode tab
73 nom
112.5 max
1.5
Nominal weight,1100g
Clamping force,50kN ±10%
Lead length,420mm
Lead terminal connector,M4 ring
Package outline type code,V
Fig.7 Package details
DCR1473SY / DCR1473SV
8/9
www.dynexsemi.com
PACKAGE DETAILS
For further package information,please contact Customer Services,All dimensions in mm,unless stated otherwise,DO NOT SCALE.
2 holes?3.6 x 2.0 deep (In both electrodes)
73 nom
Cathode
Gate
Anode
27.0 25.4
Cathode tab
73 nom
112.5 max
1.5
Nominal weight,1100g
Clamping force,50kN ±10%
Lead length,420mm
Lead terminal connector,M4 ring
Package outline type code,V
Fig.8 Package details
www.dynexsemi.com
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor,and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors,Data with respect to air natural,forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps,heatsinks and assemblies,please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel,+44 (0)1522 502753 / 502901,Fax,+44 (0)1522 500020
SALES OFFICES
Benelux,Italy & Switzerland,Tel,+33 (0)1 64 66 42 17,Fax,+33 (0)1 64 66 42 19.
France,Tel,+33 (0)2 47 55 75 53,Fax,+33 (0)2 47 55 75 59.
Germany,Northern Europe,Spain & Rest Of World,Tel,+44 (0)1522 502753 / 502901.
Fax,+44 (0)1522 500020
North America,Tel,(440) 259-2060,Fax,(440) 259-2059,Tel,(949) 733-3005,Fax,(949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE,PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road,Lincoln.
Lincolnshire,LN6 3LF,United Kingdom.
Tel,+44-(0)1522-500500
Fax,+44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used,applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned,No warranty or guarantee express or implied is made regarding the capability,performance or suitability of any product or service,The Company
reserves the right to alter without prior notice the specification,design or price of any product or service,Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment,It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded,These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user,All products and materials are sold and services provided subject to the Company's conditions of sale,which are available on request.
All brand names and product names used in this publication are trademarks,registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail,power_solutions@dynexsemi.com
