ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
V
DRM
= 5500 V
I
TGQM
= 900 A
I
TSM
=7.5kA
V
T0
=1.65V
r
T
=2
m?
V
DClink
= 3300 V
Reverse Conducting Integrated
Gate-Commutated Thyristor
5SHX 10H6004
Doc,No,5SYA1226-03 Jan,02
Direct fiber optic control
Fast response (t
don
< 3 μs,t
doff
< 6 μs)
Precise timing (?t
doff
< 800 ns)
Patented free floating silicon technology
Optimized low on-state and switching losses
Very high EMI immunity
Cosmic radiation withstand rating
Blocking
V
DRM
Repetitive peak off-state voltage 5500 V V
GR
≥ 2V
I
DRM
Repetitive peak off-state current ≤ 20 mA V
D
= V
DRM
V
GR
≥ 2V
V
DClink
Permanent DC voltage for 100
FIT failure rate
3300 V
0 ≤ T
j
≤ 115 °C,Ambient cosmic
radiation at sea level in open air.
Mechanical data (see Fig,9)
min,18 kN
F
m
Mounting force
max,22 kN
D
p
Pole-piece diameter 63 mm ±0.1 mm
H Housing thickness 26 mm ±0.5 mm
m Weight IGCT 1.7 kg
D
s
Surface creepage distance ≥ 33 mm
D
a
Air strike distance ≥ 13 mm
l Length IGCT 239 mm +0/-0.5 mm
h Height IGCT 62.5 mm ±1.0 mm
w Width IGCT 200 mm +0/-0.5 mm
5SHX 10H6004
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1226-03 Jan,02 page 2 of 9
GCT Data
On-state (see Fig,1)
I
TAVM
Max,average on-state current 355 A Half sine wave,T
C
= 85 °C
I
TRMS
Max,RMS on-state current 555 A
7.5 kA t
p
=10ms
I
TSM
Max,peak non-repetitive
surge current
15 kA t
p
=1ms
T
j
= 115 °C
After surge:
V
D
= V
R
= 0V
286x10
3
A
2
st
p
=10ms
I
2
t Limiting load integral
112x10
3
A
2
st
p
V
T
On-state voltage ≤ 3.45 V I
T
= 900 A
V
T0
Threshold voltage 1.65 V
r
T
Slope resistance 2 m?
I
T
= 200 - 2000 A
T
j
= 115 °C
Turn-on switching
f = 500 Hz T
j
= 115 °C
di/dt
crit
Max,rate of rise of on-state
current
340 A/μs
I
T
= 900 A V
D
= 3900 V
t
don
Turn-on delay time ≤ 3μs V
D
= 3300 V T
j
= 115 °C
t
r
Rise time ≤ 1μs I
T
= 900 A di/dt = 290 A/μs
t
on (min)
Min,on-time 10 μs R
S
=1.25? L
i
= 11.5 μH
E
on
Turn-on energy per pulse ≤ 0.5 J C
CL
=2μFL
CL
=0.6μH
Turn-off switching (see Fig,2,3)
V
DM
≤ V
DRM
T
j
= 115 °C
I
TGQM
Max,controllable turn-off current 900 A
V
D
= 3300 V L
CL
≤ 0.6 μH
V
DM
≤ V
DRM
T
j
= 115 °C
I
TGQM2
Max,controllable turn-off current 460 A
V
D
= 3900 V L
CL
≤ 0.6 μH
t
doff
Turn-off delay time ≤ 6μs V
D
= 3300 V V
DM
≤ V
DRM
t
f
Fall time ≤ 1μs T
j
= 115 °C R
s
=1.25?
t
off (min)
Min,off-time 10 μs I
TGQ
=I
TGQM
L
i
= 11.5 μH
E
off
Turn-off energy per pulse ≤ 4.8 J C
CL
=2μFL
CL
≤ 0.6 μH
5SHX 10H6004
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1226-03 Jan,02 page 3 of 9
Diode Data
On-state (see Fig,4)
I
FAVM
Max,average on-state current 165 A
I
FRMS
Max,RMS on-state current 260 A
Half sine wave,T
C
= 85 °C
7.6 kA t
p
=10msT
j
= 115 °C
I
FSM
Max,peak non-repetitive surge
current
17.5 kA t
p
= 1 ms After surge:
288×10
3
A
2
st
p
=10V
F
= V
R
= 0V
I
2
t Limiting load integral
153×10
3
A
2
st
p
ms
V
F
On-state voltage ≤ 6.4 V I
F
= 900 A
V
F0
Threshold voltage 2.53 V T
j
= 115 °C
r
F
Slope resistance 4.3 m?
I
F
= 200 - 2000 A
Turn-off switching (see Fig,5,6)
I
F
= 900 A T
j
= 115 °C
di/dt
crit
Max,rate of rise of on-state
current
340 A/μs
V
CL
= 3900 V
I
rr
Reverse recovery current ≤ 430 A V
CL
= 3300 V I
F
= 900 A
E
rr
Turn-off energy ≤ 2.6 J di/dt = 290 A/μs T
j
= 115 °C
R
s
=1.25? L
i
= 11.5 μH
C
CL
=2μFL
CL
=0.6μH
Gate Unit
Power supply (see Fig,9 to 11)
V
GDC
Gate Unit voltage 20 ±0.5 V
DC
Without galvanic isolation to power
circuit.
P
Gin
Gate Unit power consumption ≤ 26 W f
S
= 500 Hz,I
TGQ AV
= 375 A,δ = 0.9
X1 Gate Unit power connector WAGO,Part Number 231-532/001-000
Note 1
Optical control input/output
Note 3
(see Fig,9 to 11)
P
on CS
Optical input power > -20 dBm
P
off CS
Optical noise power < -45 dBm
Valid for 1mm plastic optical fibre
(POF)
t
GLITCH
Pulse width threshold ≤ 500 ns Max,pulse width without response
CS Receiver for command signal Agilent,Type HFBR-2528
Note 2
Note 1,WAGO,www.wago.com
Note 2,Agilent Technologies,www.semiconductor.agilent.com
Note 3,Do not disconnect or connect fiber optic cables while light is on.
5SHX 10H6004
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1226-03 Jan,02 page 4 of 9
Thermal
T
jop
Operating junction temperature range 0…115 °C
T
stg
Storage temperature range -40…60 °C
T
amb
Ambient operational temperature range 0…60 °C
Thermal resistance junction to case
R
thJC
GCT Diode not dissipating ≤ 25 K/kW Double side cooled
R
thJC
Diode GCT not dissipating ≤ 42 K/kW
Thermal resistance case to heatsink
R
thCH
GCT Diode not dissipating ≤ 8 K/kW Double side cooled
R
thCH
Diode GCT not dissipating ≤ 8K/kW
5SHX 10H6004
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1226-03 Jan,02 page 5 of 9
GCT Part
0
200
400
600
800
1000
1.5 2.0 2.5 3.0 3.5 4.0
V
T
[V]
I
T
[A]
Tj = 115°C
0 100 200 300 400 500 600 700 800 900 1000
I
TGQ
[A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
E
off
[J]
T
j
= 115°C
V
D
= 3300 V
Fig,1 GCT on-state characteristics,Fig,2 GCT turn-off energy per pulse vs.
turn-off current.
0
100
200
300
400
500
600
700
800
900
1000
0 1000 2000 3000 4000 5000
V
D
[V]
I
TGQ
[A]
T
j
= 0..115 °C
V
DM
≤ V
DRM
L
i
= 11.5 μH
C
CL
= 2.0 μF
L
CL
= 0.6 μH
R
s
= 1.25?
Fig,3 Max,repetitive GCT turn-off current.
5SHX 10H6004
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1226-03 Jan,02 page 6 of 9
Diode Part
0 100 200 300 400 500 600 700 800 900 1000
I
FQ
[A]
200
250
300
350
400
450
500
I
rr
[A]
T
j
= 115°C
di
F
/dt = 290 A/μs
V
D
= 3300 V
0 100 200 300 400 500 600 700 800 900 1000
I
FQ
[A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
E
rr
[J]
T
j
= 115°C
di
F
/dt = 290 A/μs
V
D
= 3300 V
Fig,4 Diode reverse recovery current vs.
turn-off current.
Fig,5 Diode turn-off energy per pulse vs.
turn-off current.
0
200
400
600
800
1000
3.0 4.0 5.0 6.0 7.0
V
F
[V]
I
F
[A]
Tj = 115°C
0 1000 2000 3000 4000 5000
V
D
[V]
0
100
200
300
400
500
600
700
800
900
1000
I
FQ
[A]
T
j
= 0 - 115°C
di
F
/dt = 290 A/μs
V
DM ≤
V
DRM
Fig,6 Diode on-state characteristics,Fig,7 Max,repetitive diode forward
current.
5SHX 10H6004
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1226-03 Jan,02 page 7 of 9
0 50 100 150 200 250 300 350 400
I
TGQ ave
[A]
0
5
10
15
20
25
30
35
40
45
50
P
Gin
[W]
fs = 1000 Hz
fs = 500 Hz
fs = 50 Hz
Fig,8 Gate Unit power consumption.
Fig,9 Device Outline Drawing.
5SHX 10H6004
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1226-03 Jan,02 page 8 of 9
RC-IGCT
Logic
Monitoring
Turn-
Off
Circuit
Turn-
On
Circuit
Gate
Cathode
Internal Supply (without galvanic isolation to power circuit)
Supply (20V
DC
)
X
1
CS Rx
Command Signal (Light)
Anode
Gate Unit RC-GCT
Fig,10 Block diagram.
5SHX 10H6004
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc,No,5SYA1226-03 Jan,02
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg,Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abbsem.com
1
CS
CS
I
T
V
DSP
V
DM
V
D
0.3 I
TGQ
0.8 I
TGQ
0.05 V
D
V
G
t
don
t
f
t
r
t
doff
I
T
I
TM
di/dt
0.9 V
D
0.1 V
D
V
D
Turn-on Turn-off
V
G
Fig,11 General current and voltage waveforms with IGCT-specific symbols.
L
CL
L
i
R
s
DUT
GCT - part
L
Load
DUT
Diode - part
C
CL
V
LC
Fig,12 Test circuit.
V
DRM
= 5500 V
I
TGQM
= 900 A
I
TSM
=7.5kA
V
T0
=1.65V
r
T
=2
m?
V
DClink
= 3300 V
Reverse Conducting Integrated
Gate-Commutated Thyristor
5SHX 10H6004
Doc,No,5SYA1226-03 Jan,02
Direct fiber optic control
Fast response (t
don
< 3 μs,t
doff
< 6 μs)
Precise timing (?t
doff
< 800 ns)
Patented free floating silicon technology
Optimized low on-state and switching losses
Very high EMI immunity
Cosmic radiation withstand rating
Blocking
V
DRM
Repetitive peak off-state voltage 5500 V V
GR
≥ 2V
I
DRM
Repetitive peak off-state current ≤ 20 mA V
D
= V
DRM
V
GR
≥ 2V
V
DClink
Permanent DC voltage for 100
FIT failure rate
3300 V
0 ≤ T
j
≤ 115 °C,Ambient cosmic
radiation at sea level in open air.
Mechanical data (see Fig,9)
min,18 kN
F
m
Mounting force
max,22 kN
D
p
Pole-piece diameter 63 mm ±0.1 mm
H Housing thickness 26 mm ±0.5 mm
m Weight IGCT 1.7 kg
D
s
Surface creepage distance ≥ 33 mm
D
a
Air strike distance ≥ 13 mm
l Length IGCT 239 mm +0/-0.5 mm
h Height IGCT 62.5 mm ±1.0 mm
w Width IGCT 200 mm +0/-0.5 mm
5SHX 10H6004
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1226-03 Jan,02 page 2 of 9
GCT Data
On-state (see Fig,1)
I
TAVM
Max,average on-state current 355 A Half sine wave,T
C
= 85 °C
I
TRMS
Max,RMS on-state current 555 A
7.5 kA t
p
=10ms
I
TSM
Max,peak non-repetitive
surge current
15 kA t
p
=1ms
T
j
= 115 °C
After surge:
V
D
= V
R
= 0V
286x10
3
A
2
st
p
=10ms
I
2
t Limiting load integral
112x10
3
A
2
st
p
V
T
On-state voltage ≤ 3.45 V I
T
= 900 A
V
T0
Threshold voltage 1.65 V
r
T
Slope resistance 2 m?
I
T
= 200 - 2000 A
T
j
= 115 °C
Turn-on switching
f = 500 Hz T
j
= 115 °C
di/dt
crit
Max,rate of rise of on-state
current
340 A/μs
I
T
= 900 A V
D
= 3900 V
t
don
Turn-on delay time ≤ 3μs V
D
= 3300 V T
j
= 115 °C
t
r
Rise time ≤ 1μs I
T
= 900 A di/dt = 290 A/μs
t
on (min)
Min,on-time 10 μs R
S
=1.25? L
i
= 11.5 μH
E
on
Turn-on energy per pulse ≤ 0.5 J C
CL
=2μFL
CL
=0.6μH
Turn-off switching (see Fig,2,3)
V
DM
≤ V
DRM
T
j
= 115 °C
I
TGQM
Max,controllable turn-off current 900 A
V
D
= 3300 V L
CL
≤ 0.6 μH
V
DM
≤ V
DRM
T
j
= 115 °C
I
TGQM2
Max,controllable turn-off current 460 A
V
D
= 3900 V L
CL
≤ 0.6 μH
t
doff
Turn-off delay time ≤ 6μs V
D
= 3300 V V
DM
≤ V
DRM
t
f
Fall time ≤ 1μs T
j
= 115 °C R
s
=1.25?
t
off (min)
Min,off-time 10 μs I
TGQ
=I
TGQM
L
i
= 11.5 μH
E
off
Turn-off energy per pulse ≤ 4.8 J C
CL
=2μFL
CL
≤ 0.6 μH
5SHX 10H6004
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1226-03 Jan,02 page 3 of 9
Diode Data
On-state (see Fig,4)
I
FAVM
Max,average on-state current 165 A
I
FRMS
Max,RMS on-state current 260 A
Half sine wave,T
C
= 85 °C
7.6 kA t
p
=10msT
j
= 115 °C
I
FSM
Max,peak non-repetitive surge
current
17.5 kA t
p
= 1 ms After surge:
288×10
3
A
2
st
p
=10V
F
= V
R
= 0V
I
2
t Limiting load integral
153×10
3
A
2
st
p
ms
V
F
On-state voltage ≤ 6.4 V I
F
= 900 A
V
F0
Threshold voltage 2.53 V T
j
= 115 °C
r
F
Slope resistance 4.3 m?
I
F
= 200 - 2000 A
Turn-off switching (see Fig,5,6)
I
F
= 900 A T
j
= 115 °C
di/dt
crit
Max,rate of rise of on-state
current
340 A/μs
V
CL
= 3900 V
I
rr
Reverse recovery current ≤ 430 A V
CL
= 3300 V I
F
= 900 A
E
rr
Turn-off energy ≤ 2.6 J di/dt = 290 A/μs T
j
= 115 °C
R
s
=1.25? L
i
= 11.5 μH
C
CL
=2μFL
CL
=0.6μH
Gate Unit
Power supply (see Fig,9 to 11)
V
GDC
Gate Unit voltage 20 ±0.5 V
DC
Without galvanic isolation to power
circuit.
P
Gin
Gate Unit power consumption ≤ 26 W f
S
= 500 Hz,I
TGQ AV
= 375 A,δ = 0.9
X1 Gate Unit power connector WAGO,Part Number 231-532/001-000
Note 1
Optical control input/output
Note 3
(see Fig,9 to 11)
P
on CS
Optical input power > -20 dBm
P
off CS
Optical noise power < -45 dBm
Valid for 1mm plastic optical fibre
(POF)
t
GLITCH
Pulse width threshold ≤ 500 ns Max,pulse width without response
CS Receiver for command signal Agilent,Type HFBR-2528
Note 2
Note 1,WAGO,www.wago.com
Note 2,Agilent Technologies,www.semiconductor.agilent.com
Note 3,Do not disconnect or connect fiber optic cables while light is on.
5SHX 10H6004
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1226-03 Jan,02 page 4 of 9
Thermal
T
jop
Operating junction temperature range 0…115 °C
T
stg
Storage temperature range -40…60 °C
T
amb
Ambient operational temperature range 0…60 °C
Thermal resistance junction to case
R
thJC
GCT Diode not dissipating ≤ 25 K/kW Double side cooled
R
thJC
Diode GCT not dissipating ≤ 42 K/kW
Thermal resistance case to heatsink
R
thCH
GCT Diode not dissipating ≤ 8 K/kW Double side cooled
R
thCH
Diode GCT not dissipating ≤ 8K/kW
5SHX 10H6004
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1226-03 Jan,02 page 5 of 9
GCT Part
0
200
400
600
800
1000
1.5 2.0 2.5 3.0 3.5 4.0
V
T
[V]
I
T
[A]
Tj = 115°C
0 100 200 300 400 500 600 700 800 900 1000
I
TGQ
[A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
E
off
[J]
T
j
= 115°C
V
D
= 3300 V
Fig,1 GCT on-state characteristics,Fig,2 GCT turn-off energy per pulse vs.
turn-off current.
0
100
200
300
400
500
600
700
800
900
1000
0 1000 2000 3000 4000 5000
V
D
[V]
I
TGQ
[A]
T
j
= 0..115 °C
V
DM
≤ V
DRM
L
i
= 11.5 μH
C
CL
= 2.0 μF
L
CL
= 0.6 μH
R
s
= 1.25?
Fig,3 Max,repetitive GCT turn-off current.
5SHX 10H6004
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1226-03 Jan,02 page 6 of 9
Diode Part
0 100 200 300 400 500 600 700 800 900 1000
I
FQ
[A]
200
250
300
350
400
450
500
I
rr
[A]
T
j
= 115°C
di
F
/dt = 290 A/μs
V
D
= 3300 V
0 100 200 300 400 500 600 700 800 900 1000
I
FQ
[A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
E
rr
[J]
T
j
= 115°C
di
F
/dt = 290 A/μs
V
D
= 3300 V
Fig,4 Diode reverse recovery current vs.
turn-off current.
Fig,5 Diode turn-off energy per pulse vs.
turn-off current.
0
200
400
600
800
1000
3.0 4.0 5.0 6.0 7.0
V
F
[V]
I
F
[A]
Tj = 115°C
0 1000 2000 3000 4000 5000
V
D
[V]
0
100
200
300
400
500
600
700
800
900
1000
I
FQ
[A]
T
j
= 0 - 115°C
di
F
/dt = 290 A/μs
V
DM ≤
V
DRM
Fig,6 Diode on-state characteristics,Fig,7 Max,repetitive diode forward
current.
5SHX 10H6004
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1226-03 Jan,02 page 7 of 9
0 50 100 150 200 250 300 350 400
I
TGQ ave
[A]
0
5
10
15
20
25
30
35
40
45
50
P
Gin
[W]
fs = 1000 Hz
fs = 500 Hz
fs = 50 Hz
Fig,8 Gate Unit power consumption.
Fig,9 Device Outline Drawing.
5SHX 10H6004
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
Doc,No,5SYA1226-03 Jan,02 page 8 of 9
RC-IGCT
Logic
Monitoring
Turn-
Off
Circuit
Turn-
On
Circuit
Gate
Cathode
Internal Supply (without galvanic isolation to power circuit)
Supply (20V
DC
)
X
1
CS Rx
Command Signal (Light)
Anode
Gate Unit RC-GCT
Fig,10 Block diagram.
5SHX 10H6004
ABB Switzerland Ltd,Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc,No,5SYA1226-03 Jan,02
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg,Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abbsem.com
1
CS
CS
I
T
V
DSP
V
DM
V
D
0.3 I
TGQ
0.8 I
TGQ
0.05 V
D
V
G
t
don
t
f
t
r
t
doff
I
T
I
TM
di/dt
0.9 V
D
0.1 V
D
V
D
Turn-on Turn-off
V
G
Fig,11 General current and voltage waveforms with IGCT-specific symbols.
L
CL
L
i
R
s
DUT
GCT - part
L
Load
DUT
Diode - part
C
CL
V
LC
Fig,12 Test circuit.
