RF101L2S
Diodes
1/2
Fast recovery Diode
RF101L2S
zApplications
High frequency rectification
zFeatures
1) Small power mold type (PMDS)
2) Ultra low VF
3) Very fast recovery
4) Low switching loss
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit,mm)
0.1
CATHODE MARK
4.5
±
0.2
2.6±0.2
2.0±0.2
1.2
±
0.3
1.5±0.2
5.0
±
0.3
+0.02
0.1
EX,RF101L2S → 6,6
EX,2003,09 → 3,9
1 2
3 4
,···Type No.1 2
,···Manufacturing date34
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
Reverse voltage (repetitive peak) VRM 200 V
Reverse voltage (DC) VR 200 V
Average rectified forward current
IO 1.0 A
IFSM 20 A
Junction temperature 150 °C
Storage temperature?55 to +150 °C
Mounting on glass epoxi board
Tj
Tstg
Forward peak surge current (60Hz 1cyc.)
zElectrical characteristics (Ta=25°C)
Parameter Symbol Max,Unit Conditions
Forward voltage VF 0.870 V IF=1.0A
Reverse current IR 10μ A VR=200V
Reverse recovery time
IF=0.5A
IR=1.0Atrr
Typ.
0.815
10n
12 25 nS
Note) ESD sensitive product handing required.
Irr=0.25 IR
+
RF101L2S
Diodes
2/2
zElectrical characteristic curves (Ta=25°C)
Fig.1 Forward temperature
characteristics
0 0.2 0.4 0.6 0.8 1
1000
100
10
1
125°C
FORWARD CURRENT,I
F
(mA)
FORWARD VOLTAGE,VF (V)
75°C
25°C
25°C
Fig.2 Reverse temperature
characteristics
0
10000
1000
100
10
1
0.1
50 100 150 200
REVERSE VOLTAGE,VR (V)
REVERSE CURRENT,I
R
(nA)
125°C
75°C
25°C
25°C
0
0
2.0
0.8
1.0
1.2
1.4
1.6
1.8
0.6
0.4
0.2
25 75 12550 100 150
AVERAGE RECTIFIED CURRENT,I
O
(A)
AMBIENT TEMPERATURE,Ta (°C)
Fig.3 Derating curve
DC
D=1/2
Sin(θ=180)
T
t
IO
0A
0V
VR
D=t / T
VR=200V
Tj=150°C
0.0
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
FORWARD POWER DISSIPATION,P
F
(W)
AVERAGE RECTIFIED FORWARD CURRENT,IO (A)
Fig,4 Power dissipation
characteristics
DC
D=1/2
Sin(θ=180)
0
20
25
15
10
5
1 10 100
CYCLE
SURGE FORWARD CURRENT,I
FSM
(A)
Fig.5 Forward peak surge current
8.3ms 8.3ms
1cycle
sin wave
I
FSM
0 5 10 15 20 25 30
100
10
0
CAPACITANCE BETWEEN TERMINALS,C
T
(pF)
REVERSE VOLTAGE,VR (V)
Fig,6 Capacitance between terminals
characteristics
0
0
6 8 10 12 14 16 18 20
0.25
0.5
0.75
1
1.5
1.25
FORWARD CURRENT,I
F
(A)
RECOVERY TIMES,trr (ns)
Fig,7 Reverse recovery time
IR=1.0A
Irr=0.25 IR
+