Mar,2003
MITSUBISHI FAST RECOVERY DIODE MODULE
RM400DY-66S
HIGH POWER SWITCHING USE
INSULATED TYPE
APPLICATION
3-level inverters,3-level converters,DC choppers.
RM400DY-66S
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
a71 IDC,...............................................................400A
a71 VRRM,....................................................,3300V
a71 Insulated type
a71 2-elements in a pack
HVDi (High Voltage Diode) Module
(C)
(C)(E)
(E)
K2
CIRCUIT DIAGRAM
A2
K1A1
LABEL
4-M8 NUTS
C
EE
C
GEC
K1 K2
A1 A2
57 ± 0.25 57 ± 0.25
20
124
±
0.25
140
130
114
5
38
18
61.5
15
30
40
6-φ7 MOUNTING HOLES
Mar,2003
66
3300
3300
2200
MITSUBISHI FAST RECOVERY DIODE MODULE
RM400DY-66S
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
Voltage class
VRRM
VRSM
VR(DC)
Symbol
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
Item
V
V
V
Unit
A
A
A
2
s
°C
°C
V
N · m
N · m
kg
IDC
IFSM
I
2
t
Tj
Tstg
Viso
—
—
Output DC current
Surge forward current
I
2
t for fusing
Junction temperature
Storage temperature
Isolation Voltage
Mounting torque
Mass
TC =25°C
1 cycle of half wave 60Hz,peak value,non-repetitive,
Tj = 25°C start,VRM = 0V
Value of one cycle surge current,
tW = 8.3ms,Tj = 25°C start
—
—
Charged part to base plate,rms,sinusoidal,AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Typical value
400
3200
4.27? 10
4
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
1.5
Symbol Item Conditions UnitRatings
—
3.50
—
100
—
0.036
—
—
—
—
—
—
mA
V
μs
μC
K/W
K/W
Repetitive reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Termal resistance
Contact thermal resistance
IRRM
VFM
trr
Qrr
Rth(j-c)
Rth(c-f)
VRRM applied,VRM = VRRM
IFM = 400A
IFM = 400A,dif/dt = –800A/μs,
VR = 1650V
Junction to case (Per 1/2 module)
Case to fin,conductive grease applied (Per 1/2 module)
Min Typ Max
Symbol Item Conditions
Limits
Unit
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
3
4.55
1.20
—
0.072
—
HVDi (High Voltage Diode) Module
Mar,2003
MITSUBISHI FAST RECOVERY DIODE MODULE
RM400DY-66S
HIGH POWER SWITCHING USE
INSULATED TYPE
HVDi (High Voltage Diode) Module
FORWARD CURRENT
(
A
)
0
300
200
100
10000 200 400 800600
VCC = 1650V,diF/dt = –800A/μs
Tj = 25°C
Inductive load
Integrated over range of 10%
012345
10
2
7
5
3
10
3
7
5
3
2
FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
MAXIMUM FORWARD CHARACTERISTIC
3
2
Tj = 25°C
10
–2
10
–3
10
–2
10
–1
10
0
7
5
3
2
10
–1
7
5
3
2
10
0
10
1
7
5
3
2
23 57 23 57 23 57
TIME
(
s
)
Single Pulse
TC = 25°C
Rth(j – c) = 0.072K/W
Z
th(
j
–
c)
(
°
C/
W)
MAXIMUM TRANSIENT THERMAL IMPEDANCE
(
JUNCTION TO CASE
)
Q
rr
(
μ
C)
REVERSE RECOVERY CHARACTERISTICS
VS,FORWARD CURRENT
(
TYPICAL
)
–di/dt
(
A/μs
)
Q
rr
(
μ
C)
REVERSE RECOVERY CHARACTERISTICS
VS,–di/dt
(
TYPICAL
)
0 500 1000 1500 2000 2500
0
100
200
300
400
500
VCC = 1650V
IF = 400A
PERFORMANCE CURVES