ABB Semiconductors AG reserves the right to change specifications without notice.
V
RRM
= 2500 V
I
FAVM
= 420 A
I
FSM
=8.5kA
V
F0
=1.7V
r
F
=0.62
m?
V
DClink
= 1500 V
Doc,No,5SYA1114-03 Sep,01
Patented free-floating silicon technology
Low on-state and switching losses
Optimized for use as freewheeling diode in GTO converters
Standard press-pack housing,hermetically cold-welded
Cosmic radiation withstand rating
Blocking
V
RRM
Repetitive peak reverse voltage 2500 V Half sine wave,t
P
= 10 ms,f = 50 Hz
I
RRM
Repetitive peak reverse current ≤ 50 mA V
R
= V
RRM,
T
j
= 125°C
V
DClink
Permanent DC voltage for 100 FIT
failure rate
1500 V
100% Duty
V
DClink
Permanent DC voltage for 100 FIT
failure rate
V
5% Duty
Ambient cosmic radiation at
sea level in open air.
Mechanical data (see Fig,12)
min,10 kN
F
m
Mounting force
max,12 kN
a
Acceleration:
Device unclamped
Device clamped
50
200
m/s
2
m/s
2
m Weight 0.25 kg
D
S
Surface creepage distance ≥ 30 mm
D
a
Air strike distance ≥ 20 mm
Fast Recovery Diode
5SDF 05D2505
5SDF 05D2505
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc,No,5SYA1114-03 Sep,01 page 2 of 6
On-state (see Fig,2,3)
I
FAVM
Max,average on-state current 420 A
I
FRMS
Max,RMS on-state current 670 A
Half sine wave,T
c
= 85°C
I
FSM
Max,peak non-repetitive 8.5 kA tp = 10 ms Before surge:
surge current 27 kA tp = 1 ms T
c
= T
j
= 125°C
0.36?10
6
A
2
stp= 10ms
After surge:Gf2I
2
dt Max,surge current integral
0.36?10
6
A
2
stp= 1msV
R
≈ 0 V
V
F
Forward voltage drop ≤ 2.3 V I
F
= 1000 A
V
F0
Threshold voltage 1.7 V Approximation for
r
F
Slope resistance 0.62 m? I
F
= 500…3500 A
T
j
= 125°C
Turn-on (see Fig,4,5)
V
fr
Peak forward recovery voltage ≤ 16 V di/dt = 500 A/μs,T
j
= 125°C
Turn-off (see Fig,6 to 11)
I
rr
Reverse recovery current ≤ 470 A
Q
rr
Reverse recovery charge ≤ 840 μC
E
rr
Turn-off energy ≤ 0.34 J
di/dt = 300 A/μs,I
F
= 700 A,
T
j
= 125°C,V
RM
= 2300 V,
C
S
= 2μF (GTO snubber circuit)
Thermal (see Fig,1)
T
j
Operating junction temperature range -40...125°C
T
stg
Storage temperature range -40...125°C
R
thJC
Thermal resistance junction to case ≤ 80 K/kW Anode side cooled
≤ 80 K/kW Cathode side cooled
≤ 40 K/kW Double side cooled
R
thCH
Thermal resistance case to heatsink ≤ 16 K/kW Single side cooled
F
m
=
10… 12 kN
≤ 8 K/kW Double side cooled
Analytical function for transient thermal impedance.
i1234
R
i
(K/kW) 20.95 10.57 7.15 1.33
τ
i
(s)
0.396 0.072 0.009 0.0044
)e-(1R = (t)Z
n
1i
/t-
ithJC
Ge5
=
iτ
F
m
= 10… 12 kN Double side cooled
5SDF 05D2505
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc,No,5SYA1114-03 Sep,01 page 3 of 6
Fig,1 Transient thermal impedance (junction-to-case) vs,time in analytical and graphical form (max,values).
Fig,2 Forward current vs,forward voltage (typ.
and max,values) and linear approximation
of max,curve at 125°C.
Fig,3 Surge current and fusing integral vs,pulse
width (max,values) for non-repetitive,half-
sinusoidal surge current pulses.
5SDF 05D2505
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc,No,5SYA1114-03 Sep,01 page 4 of 6
Fig,4 Typical forward voltage waveform when the
diode is turned on with a high di/dt.
Fig,5 Forward recovery voltage vs,turn-on di/dt
(max,values).
Fig,6 Typical current and voltage waveforms at turn-off when the diode is connected to an RCD snubber,as
often used in GTO circuits.
5SDF 05D2505
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc,No,5SYA1114-03 Sep,01 page 5 of 6
Fig,7 Reverse recovery current vs,turn off di/dt
(max,values).
Fig,8 Reverse recovery charge vs,turn off di/dt
(max,values).
Fig,9 Turn-off energy vs,turn-off di/dt for I
F
= 300
A (max,values).
Fig,10 Turn-off energy vs,turn-off di/dt for I
F
= 700
A (max,values).
5SDF 05D2505
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc,No,5SYA1114-03 Sep,01
Fabrikstrasse 3
CH-5600 Lenzburg,Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Fig,11 Turn-off energy vs,turn-off di/dt for I
F
= 2000
A (max,values).
Fig,12 Outline drawing,All dimensions are in
millimeters and represent nominal values
unless stated otherwise.
V
RRM
= 2500 V
I
FAVM
= 420 A
I
FSM
=8.5kA
V
F0
=1.7V
r
F
=0.62
m?
V
DClink
= 1500 V
Doc,No,5SYA1114-03 Sep,01
Patented free-floating silicon technology
Low on-state and switching losses
Optimized for use as freewheeling diode in GTO converters
Standard press-pack housing,hermetically cold-welded
Cosmic radiation withstand rating
Blocking
V
RRM
Repetitive peak reverse voltage 2500 V Half sine wave,t
P
= 10 ms,f = 50 Hz
I
RRM
Repetitive peak reverse current ≤ 50 mA V
R
= V
RRM,
T
j
= 125°C
V
DClink
Permanent DC voltage for 100 FIT
failure rate
1500 V
100% Duty
V
DClink
Permanent DC voltage for 100 FIT
failure rate
V
5% Duty
Ambient cosmic radiation at
sea level in open air.
Mechanical data (see Fig,12)
min,10 kN
F
m
Mounting force
max,12 kN
a
Acceleration:
Device unclamped
Device clamped
50
200
m/s
2
m/s
2
m Weight 0.25 kg
D
S
Surface creepage distance ≥ 30 mm
D
a
Air strike distance ≥ 20 mm
Fast Recovery Diode
5SDF 05D2505
5SDF 05D2505
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc,No,5SYA1114-03 Sep,01 page 2 of 6
On-state (see Fig,2,3)
I
FAVM
Max,average on-state current 420 A
I
FRMS
Max,RMS on-state current 670 A
Half sine wave,T
c
= 85°C
I
FSM
Max,peak non-repetitive 8.5 kA tp = 10 ms Before surge:
surge current 27 kA tp = 1 ms T
c
= T
j
= 125°C
0.36?10
6
A
2
stp= 10ms
After surge:Gf2I
2
dt Max,surge current integral
0.36?10
6
A
2
stp= 1msV
R
≈ 0 V
V
F
Forward voltage drop ≤ 2.3 V I
F
= 1000 A
V
F0
Threshold voltage 1.7 V Approximation for
r
F
Slope resistance 0.62 m? I
F
= 500…3500 A
T
j
= 125°C
Turn-on (see Fig,4,5)
V
fr
Peak forward recovery voltage ≤ 16 V di/dt = 500 A/μs,T
j
= 125°C
Turn-off (see Fig,6 to 11)
I
rr
Reverse recovery current ≤ 470 A
Q
rr
Reverse recovery charge ≤ 840 μC
E
rr
Turn-off energy ≤ 0.34 J
di/dt = 300 A/μs,I
F
= 700 A,
T
j
= 125°C,V
RM
= 2300 V,
C
S
= 2μF (GTO snubber circuit)
Thermal (see Fig,1)
T
j
Operating junction temperature range -40...125°C
T
stg
Storage temperature range -40...125°C
R
thJC
Thermal resistance junction to case ≤ 80 K/kW Anode side cooled
≤ 80 K/kW Cathode side cooled
≤ 40 K/kW Double side cooled
R
thCH
Thermal resistance case to heatsink ≤ 16 K/kW Single side cooled
F
m
=
10… 12 kN
≤ 8 K/kW Double side cooled
Analytical function for transient thermal impedance.
i1234
R
i
(K/kW) 20.95 10.57 7.15 1.33
τ
i
(s)
0.396 0.072 0.009 0.0044
)e-(1R = (t)Z
n
1i
/t-
ithJC
Ge5
=
iτ
F
m
= 10… 12 kN Double side cooled
5SDF 05D2505
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc,No,5SYA1114-03 Sep,01 page 3 of 6
Fig,1 Transient thermal impedance (junction-to-case) vs,time in analytical and graphical form (max,values).
Fig,2 Forward current vs,forward voltage (typ.
and max,values) and linear approximation
of max,curve at 125°C.
Fig,3 Surge current and fusing integral vs,pulse
width (max,values) for non-repetitive,half-
sinusoidal surge current pulses.
5SDF 05D2505
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc,No,5SYA1114-03 Sep,01 page 4 of 6
Fig,4 Typical forward voltage waveform when the
diode is turned on with a high di/dt.
Fig,5 Forward recovery voltage vs,turn-on di/dt
(max,values).
Fig,6 Typical current and voltage waveforms at turn-off when the diode is connected to an RCD snubber,as
often used in GTO circuits.
5SDF 05D2505
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc,No,5SYA1114-03 Sep,01 page 5 of 6
Fig,7 Reverse recovery current vs,turn off di/dt
(max,values).
Fig,8 Reverse recovery charge vs,turn off di/dt
(max,values).
Fig,9 Turn-off energy vs,turn-off di/dt for I
F
= 300
A (max,values).
Fig,10 Turn-off energy vs,turn-off di/dt for I
F
= 700
A (max,values).
5SDF 05D2505
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc,No,5SYA1114-03 Sep,01
Fabrikstrasse 3
CH-5600 Lenzburg,Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Fig,11 Turn-off energy vs,turn-off di/dt for I
F
= 2000
A (max,values).
Fig,12 Outline drawing,All dimensions are in
millimeters and represent nominal values
unless stated otherwise.
